Scholarlink

<p>Stretchable organic field-effect transistors (OFETs) are ideal candidates for wearable technologies, human-machine interfaces, soft robots and implantable devices, but they suffer from mechanical stress concentration, microcracks, and interfacial damage under large geometric variation, which leads to severe performance degradation. To transcend this limitation, we propose an O<sub>2</sub> plasma-assisted barrier regulation strategy for the fabrication of the organic source-gated transistor (OSGT). The Schottky barrier dominated transport mode of OSGTs substantially reduces the sensitivity of electrical performance to mechanical strain, thereby enhancing the strain limit of stretchable OFETs under geometric variations. The stretchable OSGTs could maintain a high on/off ratio (10<sup>6</sup>) at 300% strain and the performance has no obvious attenuation. This architectural strategy shifts the focus from material engineering to device design, offering broader prospects for the development of stretchable electronic devices requiring large deformations.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhancing the strain limit of stretchable organic transistors by Schottky barrier-dominated transport mode

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月10日

查看全文
  • Yao Fu,
  • Xinran Zheng,
  • Shuguang Wang,
  • Shougang Sun,
  • Yanpeng Wang,
  • Zhongwu Wang,
  • Yinan Huang,
  • Lin Li,
  • Xiaosong Chen,
  • Hui Yang,
  • Liqiang Li,
  • Wenping Hu

摘要

Stretchable organic field-effect transistors (OFETs) are ideal candidates for wearable technologies, human-machine interfaces, soft robots and implantable devices, but they suffer from mechanical stress concentration, microcracks, and interfacial damage under large geometric variation, which leads to severe performance degradation. To transcend this limitation, we propose an O2 plasma-assisted barrier regulation strategy for the fabrication of the organic source-gated transistor (OSGT). The Schottky barrier dominated transport mode of OSGTs substantially reduces the sensitivity of electrical performance to mechanical strain, thereby enhancing the strain limit of stretchable OFETs under geometric variations. The stretchable OSGTs could maintain a high on/off ratio (106) at 300% strain and the performance has no obvious attenuation. This architectural strategy shifts the focus from material engineering to device design, offering broader prospects for the development of stretchable electronic devices requiring large deformations.