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<p>The integration of light polarization into non-volatile memory enables angle-resolved information processing, unlocking new photonic channels for communication, computation and imaging. Yet practical polarization-sensitive memory remains rare. Here, we report a 2D rhenium disulfide (ReS<sub>2</sub>)/hafnium zirconium oxide (Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>, HZO) ferroelectric field-effect transistor in which field-driven charge separation realizes polarization-resolved memory. The redistribution of photo-generated carriers at the heterostructure interface establishes an interfacial electrostatic field that modulates HZO ferroelectric domains and encodes non-volatile states. We also find that interfacial compressive stress induced by lattice mismatch shortens the Re-Re bond, which enhances the Re-Re chain anisotropy by 3.7x (from 2.67 to 9.98). Integrated into arrays for photonic neural networks, the device attains &gt;93% accuracy on a transformer model. Leveraging the cumulative switching property of HZO with sequential optical signals, the device enables in-situ multiplication and accumulation of inputs over time, achieving 4x area saving with &lt;1% accuracy loss. Beyond amplitude and phase, the demonstrated electro-optic device enables optical polarization as an additional information read-out, which significantly increases the information density of photonic-based computing.</p>

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Light polarization-based electro-optic memory

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月2日

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  • Quanzhen Wan,
  • Shi Zhao,
  • Baoshan Tang,
  • Zhi Gen Yu,
  • Zihang Fang,
  • Jin Feng Leong,
  • Zefeng Xu,
  • Yong-Wei Zhang,
  • Evgeny Zamburg,
  • Aaron Voon-Yew Thean

摘要

The integration of light polarization into non-volatile memory enables angle-resolved information processing, unlocking new photonic channels for communication, computation and imaging. Yet practical polarization-sensitive memory remains rare. Here, we report a 2D rhenium disulfide (ReS2)/hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) ferroelectric field-effect transistor in which field-driven charge separation realizes polarization-resolved memory. The redistribution of photo-generated carriers at the heterostructure interface establishes an interfacial electrostatic field that modulates HZO ferroelectric domains and encodes non-volatile states. We also find that interfacial compressive stress induced by lattice mismatch shortens the Re-Re bond, which enhances the Re-Re chain anisotropy by 3.7x (from 2.67 to 9.98). Integrated into arrays for photonic neural networks, the device attains >93% accuracy on a transformer model. Leveraging the cumulative switching property of HZO with sequential optical signals, the device enables in-situ multiplication and accumulation of inputs over time, achieving 4x area saving with <1% accuracy loss. Beyond amplitude and phase, the demonstrated electro-optic device enables optical polarization as an additional information read-out, which significantly increases the information density of photonic-based computing.