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<p>Ultra-wide bandgap gallium oxides offer tremendous possibilities to develop short-wave optoelectronic devices. However, it is formidably challenging to produce single-crystal gallium oxide wafer and develop high-performance high-dimensional optoelectronics. Here we show a liquid-metal-assisted strategy to directly synthesize and transfer single-crystal, large-area and ultrathin β-Ga<sub>2</sub>O<sub>3</sub>. Benefiting from the UV-exposure oxidation of liquid gallium and strong interaction with gallium, our β-Ga<sub>2</sub>O<sub>3</sub> film shows a 4-inch wafer-scale size, a 7.5-nm thickness and a flexible transfer operation. The solar-blind β-Ga<sub>2</sub>O<sub>3</sub> detector achieves high responsivity (16.3 A W<sup>−1</sup>), fast response (&lt;150 μs) and wide linear dynamic range (120 dB). By employing metasurface design, the anisotropy ratio reaches a record high value of 28.8 for Ga<sub>2</sub>O<sub>3</sub>-based detectors. Moreover, we develop a sundial-inspired metasystem to simultaneously detect the incident direction, polarization, and intensity of solar-blind irradiation. These findings illustrate the potential of high-quality Ga<sub>2</sub>O<sub>3</sub> wafer for high-dimensional photodetection, paving the way for next-generation solar-blind communications.</p>

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Single-crystal, 4-inch and ultrathin gallium oxide for sundial-inspired high-dimensional solar-blind photodetection metasystem

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月29日

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  • Weiheng Zhong,
  • Jiajuan Shi,
  • Weizhen Liu,
  • Jiawei Jing,
  • Haiyang Xu,
  • Xingsi Liu,
  • Jintao Fu,
  • Xinyun Zhu,
  • Yichun Liu,
  • Cheng-Wei Qiu

摘要

Ultra-wide bandgap gallium oxides offer tremendous possibilities to develop short-wave optoelectronic devices. However, it is formidably challenging to produce single-crystal gallium oxide wafer and develop high-performance high-dimensional optoelectronics. Here we show a liquid-metal-assisted strategy to directly synthesize and transfer single-crystal, large-area and ultrathin β-Ga2O3. Benefiting from the UV-exposure oxidation of liquid gallium and strong interaction with gallium, our β-Ga2O3 film shows a 4-inch wafer-scale size, a 7.5-nm thickness and a flexible transfer operation. The solar-blind β-Ga2O3 detector achieves high responsivity (16.3 A W−1), fast response (<150 μs) and wide linear dynamic range (120 dB). By employing metasurface design, the anisotropy ratio reaches a record high value of 28.8 for Ga2O3-based detectors. Moreover, we develop a sundial-inspired metasystem to simultaneously detect the incident direction, polarization, and intensity of solar-blind irradiation. These findings illustrate the potential of high-quality Ga2O3 wafer for high-dimensional photodetection, paving the way for next-generation solar-blind communications.