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<p>The discovery of two-dimensional (2D) semiconducting ferroelectric (SFe) materials marks a pivotal step toward the realization of ferroelectric random-access memory. Despite their potential as ideal platforms for ultrafast switching and ultralow power consumption, SFe monolayers remain largely unexplored. In this work, we demonstrate field-effect transistor employing monolayer Janus MoSeS, which exhibits switchable polarization when integrated on an amorphous ZrO<sub>2</sub> layer with a high dielectric constant. The non-centrosymmetric structure of MoSeS enables gate-switchable spontaneous out-of-plane polarization, attributed to atomic displacements. The device demonstrates counterclockwise (CCW) memory windows of ~5 V, an on/off ratio exceeding 10<sup>6</sup> at zero gate bias, and a retention time much longer than 10,000 s. Furthermore, it achieves fatigue-free endurance over 10<sup>7</sup> cycles and ultrafast responses to 16.5 ns voltage spikes, resulting in ultralow power consumption of 113.9&#xa0;fJ for programming and 89.8 fJ for erasing in each cycle. These performances establish Janus monolayers as promising candidates for next-generation nonvolatile memory and neuromorphic computing applications. Further work will be necessary to establish the switching mechanisms of the devices.</p>

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Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月20日

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  • Ngoc Thanh Duong,
  • Swathi Krishna,
  • Minh Chien Nguyen,
  • Hang Sik Kim,
  • Vu Tien Lam,
  • Hamza Zad Gul,
  • Soo Ho Choi,
  • Minjeong Kim,
  • Daekwon Lee,
  • Thi Uyen Tran,
  • Vu Khac Dat,
  • Van Dam Do,
  • Van Huy Hoang,
  • Heesuk Rho,
  • Young-Min Kim,
  • Woo Jong Yu,
  • Ki Kang Kim,
  • Seong Chu Lim

摘要

The discovery of two-dimensional (2D) semiconducting ferroelectric (SFe) materials marks a pivotal step toward the realization of ferroelectric random-access memory. Despite their potential as ideal platforms for ultrafast switching and ultralow power consumption, SFe monolayers remain largely unexplored. In this work, we demonstrate field-effect transistor employing monolayer Janus MoSeS, which exhibits switchable polarization when integrated on an amorphous ZrO2 layer with a high dielectric constant. The non-centrosymmetric structure of MoSeS enables gate-switchable spontaneous out-of-plane polarization, attributed to atomic displacements. The device demonstrates counterclockwise (CCW) memory windows of ~5 V, an on/off ratio exceeding 106 at zero gate bias, and a retention time much longer than 10,000 s. Furthermore, it achieves fatigue-free endurance over 107 cycles and ultrafast responses to 16.5 ns voltage spikes, resulting in ultralow power consumption of 113.9 fJ for programming and 89.8 fJ for erasing in each cycle. These performances establish Janus monolayers as promising candidates for next-generation nonvolatile memory and neuromorphic computing applications. Further work will be necessary to establish the switching mechanisms of the devices.