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<p>Control over charge density wave (CDW) states is technologically promising for the development of ultra-efficient memory devices. However, using electrical pulses for non-volatile resistance switching involving CDW states has so far been limited to cryogenic temperatures. In this work, we investigate a recently discovered layered semiconductor EuTe<sub>4,</sub> which exhibits the coexistence of distinct CDW orders. We report that electrical pulses can be used for excitation to non-equilibrium, yet stable electronic states across a broad temperature range from 6 K to 400 K. We find that switching occurs through a non-thermal pathway and is reversible via a thermal erase procedure. The resistance of the new electronic state is tunable by the pulse voltage, so the device acts as a memristor. Calculations show fixed bilayer CDW, whereas CDW in single layers shows bistability due to weak Eu-Te links. Low-voltage, fast, and energy-efficient CDW switching holds potential for memristor applications.</p>

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Room-temperature memristive switching between charge density wave states

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月21日

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  • R. Venturini,
  • M. Rupnik,
  • J. Gašperlin,
  • J. Lipič,
  • P. Šutar,
  • Y. Vaskivskyi,
  • F. Ščepanović,
  • D. Grabnar,
  • D. Golež,
  • D. Mihailovic

摘要

Control over charge density wave (CDW) states is technologically promising for the development of ultra-efficient memory devices. However, using electrical pulses for non-volatile resistance switching involving CDW states has so far been limited to cryogenic temperatures. In this work, we investigate a recently discovered layered semiconductor EuTe4, which exhibits the coexistence of distinct CDW orders. We report that electrical pulses can be used for excitation to non-equilibrium, yet stable electronic states across a broad temperature range from 6 K to 400 K. We find that switching occurs through a non-thermal pathway and is reversible via a thermal erase procedure. The resistance of the new electronic state is tunable by the pulse voltage, so the device acts as a memristor. Calculations show fixed bilayer CDW, whereas CDW in single layers shows bistability due to weak Eu-Te links. Low-voltage, fast, and energy-efficient CDW switching holds potential for memristor applications.