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<p>Boosting carrier mobility is essential for achieving high room-temperature thermoelectric performance in n-type Bi<sub>2</sub>Te<sub>3</sub>-based films, which have long exhibited inferior power factors compared with their single crystal counterparts due to poor carrier mobility. To overcome this challenge, we develop a simple substrate surface engineering strategy to fabricate Twin-free n-type Bi<sub>2</sub>Te<sub>3</sub> (000 <i>l</i>) thin films. Atomic-scale analyses and transport measurements uncover that eliminating twin structures avoids twin-induced band bending and severe lattice strain, enabling the simultaneously enhanced carrier mobility and suppressed bipolar conduction. The optimized Twin-free Bi<sub>2</sub>Te<sub>3</sub> film exhibits a high room-temperature carrier mobility of ~279 cm<sup>2 </sup>V<sup>-1</sup> s<sup>-1</sup>, doubling the mobility of films containing twin structures, and consequently achieves an extraordinary room-temperature power factor of ~6.17 mW m<sup>-1</sup> K<sup>-2</sup>. These findings highlight the critical role of minimizing twin structures in boosting the carrier mobility and mitigating bipolar conduction, thereby providing an effective route toward high-performance thermoelectric thin films.</p>

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Minimal twin structures enabling extraordinary thermoelectric power factor of n-type Bi2Te3 thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月6日

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  • Haoran Ge,
  • Rui Cheng,
  • Wei Liu,
  • Jiamin Qiu,
  • Sen Xie,
  • Zhaohui Wang,
  • Fan Yan,
  • Qiwei Tong,
  • Jiahong Cheng,
  • Tingting Su,
  • Yujie Ouyang,
  • Hao Sang,
  • Xianda Li,
  • Zhengfei Wei,
  • Jun Mao,
  • Yong Liu,
  • Huangshui Ma,
  • Min Hong,
  • Dongwang Yang,
  • Ctirad Uher,
  • Qingjie Zhang,
  • Xinfeng Tang

摘要

Boosting carrier mobility is essential for achieving high room-temperature thermoelectric performance in n-type Bi2Te3-based films, which have long exhibited inferior power factors compared with their single crystal counterparts due to poor carrier mobility. To overcome this challenge, we develop a simple substrate surface engineering strategy to fabricate Twin-free n-type Bi2Te3 (000 l) thin films. Atomic-scale analyses and transport measurements uncover that eliminating twin structures avoids twin-induced band bending and severe lattice strain, enabling the simultaneously enhanced carrier mobility and suppressed bipolar conduction. The optimized Twin-free Bi2Te3 film exhibits a high room-temperature carrier mobility of ~279 cm2 V-1 s-1, doubling the mobility of films containing twin structures, and consequently achieves an extraordinary room-temperature power factor of ~6.17 mW m-1 K-2. These findings highlight the critical role of minimizing twin structures in boosting the carrier mobility and mitigating bipolar conduction, thereby providing an effective route toward high-performance thermoelectric thin films.