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<p>Current-induced spin-orbit torque (SOT) is an effective approach to manipulate magnetic states in spintronic devices. Recent studies show picosecond electrical pulses can induce coherent magnetization switching, reducing switching time from nanosecond scale to picosecond scale. However, it remains unclear whether such ultrafast switching can be achieved in a perpendicular magnetic anisotropy system without an external magnetic field. Here, we demonstrate picosecond all-electrical magnetization switching in a CoTb/Ti/CoFeB/MgO heterostructure, where the in-plane magnetized CoTb layer acts as the SOT source, generating simultaneously in-plane spin current <i>σ</i><sub>y</sub> and out-of-plane spin current <i>σ</i><sub>z</sub>. The strong spin-orbit coupling in Tb significantly enhances the SOT efficiency, enabling 16 ps switching with projected 41 fJ/bit consumption in a 100×100 nm² device. Micromagnetic simulations and numerical analysis reveal trade-off between pulse width and energy consumption and identify an optimal <i>σ</i><sub>z</sub>/<i>σ</i><sub>y</sub> ratio for energy-efficient switching. Our work promotes the frequency of spintronic devices toward THz regime.</p>

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Picosecond all-electrical perpendicular magnetization switching

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月29日

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  • Yu He,
  • Chen Xiao,
  • Kelian Lin,
  • Kun Zhang,
  • Boyu Zhang,
  • Zhenyi Zheng,
  • Yue Zhang,
  • Wenlong Cai,
  • Zuojun Song,
  • Dinghao Ma,
  • Xueqiang Feng,
  • Lei Chen,
  • Bo Li,
  • Guo Liu,
  • Shidong Li,
  • Xiangyu Zheng,
  • Zhizhong Zhang,
  • Jingsheng Chen,
  • Weisheng Zhao

摘要

Current-induced spin-orbit torque (SOT) is an effective approach to manipulate magnetic states in spintronic devices. Recent studies show picosecond electrical pulses can induce coherent magnetization switching, reducing switching time from nanosecond scale to picosecond scale. However, it remains unclear whether such ultrafast switching can be achieved in a perpendicular magnetic anisotropy system without an external magnetic field. Here, we demonstrate picosecond all-electrical magnetization switching in a CoTb/Ti/CoFeB/MgO heterostructure, where the in-plane magnetized CoTb layer acts as the SOT source, generating simultaneously in-plane spin current σy and out-of-plane spin current σz. The strong spin-orbit coupling in Tb significantly enhances the SOT efficiency, enabling 16 ps switching with projected 41 fJ/bit consumption in a 100×100 nm² device. Micromagnetic simulations and numerical analysis reveal trade-off between pulse width and energy consumption and identify an optimal σz/σy ratio for energy-efficient switching. Our work promotes the frequency of spintronic devices toward THz regime.