Scholarlink

<p>Photodetectors that can achieve both high sensitivity and fast speed remain a challenge due to inherent trade-offs, particularly limiting in photonic integrated circuits. While substantial progress has been made in broadening spectral response, few strategies have directly addressed the simultaneous enhancement of sensitivity and speed. Here, we introduce a two-dimensional photodetector incorporating a functional interlayer, monolayer tungsten oxyselenide (TOS), formed between n-type PdPSe and p-type WSe<sub>2</sub>. TOS serves multifunctional roles to overcome the trade-offs: suppressing dark current as a hole barrier, enhancing responsivity via photogating, and preserving speed through trap-assisted tunneling and direct tunneling. Under spatially resolved illumination, the device shows a detectivity (<i>D</i>*) of 3.78 × 10<sup>15</sup> Jones at 520 nm, with a bandwidth of 0.055 GHz at 785 nm. When integrated onto a silicon photonic platform, it achieves <i>D</i>* of 3.69 × 10<sup>11</sup> Jones and a bandwidth of 0.11 GHz at 785 nm, outperforming most reported on-chip photodetectors. These results establish a route to sensitive, high-speed photodetectors for optical interconnect, communications, and sensing applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Overcoming the sensitivity–speed trade-off in two-dimensional photodetectors via a functional oxide interlayer

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年4月22日

查看全文
  • Yuhui Yang,
  • Qingyun Wu,
  • Xiangxin Gong,
  • Ruihuan Duan,
  • Shi Guo,
  • Cheng Sun,
  • Lalit Singh,
  • Jinpeng Huo,
  • Sung-Gyu Lee,
  • Fan Zhang,
  • Rui Yu,
  • Wenduo Chen,
  • Takashi Taniguchi,
  • Kenji Watanabe,
  • Fabio Bussolotti,
  • Calvin Pei Yu Wong,
  • Kuan Eng Johnson Goh,
  • Diing Shenp Ang,
  • Haiming Zhu,
  • Qi Jie Wang,
  • Zheng Liu,
  • Lay Kee Ang,
  • Sang Hoon Chae

摘要

Photodetectors that can achieve both high sensitivity and fast speed remain a challenge due to inherent trade-offs, particularly limiting in photonic integrated circuits. While substantial progress has been made in broadening spectral response, few strategies have directly addressed the simultaneous enhancement of sensitivity and speed. Here, we introduce a two-dimensional photodetector incorporating a functional interlayer, monolayer tungsten oxyselenide (TOS), formed between n-type PdPSe and p-type WSe2. TOS serves multifunctional roles to overcome the trade-offs: suppressing dark current as a hole barrier, enhancing responsivity via photogating, and preserving speed through trap-assisted tunneling and direct tunneling. Under spatially resolved illumination, the device shows a detectivity (D*) of 3.78 × 1015 Jones at 520 nm, with a bandwidth of 0.055 GHz at 785 nm. When integrated onto a silicon photonic platform, it achieves D* of 3.69 × 1011 Jones and a bandwidth of 0.11 GHz at 785 nm, outperforming most reported on-chip photodetectors. These results establish a route to sensitive, high-speed photodetectors for optical interconnect, communications, and sensing applications.