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<p>Due to a stray field formation from the alternating ferroelectric bound charges of the multidomain state of the ferroelectric thin films, the negative capacitance effect can emerge in the ferroelectric/dielectric bilayer devices. However, the capacitance behavior of the thin ferroelectric/dielectric stacked films in the nanoscale cylindrical structure deviated from the negative capacitance state to unpredicted other states. This work confirmed that the thin (2.0 – 3.0 nm) ferroelectric Hf<sub>0.33</sub>Zr<sub>0.67</sub>O<sub>2</sub> layer could have a positive capacitance, infinite capacitance, or negative capacitance by controlling the thickness of the stacked dielectric Al<sub>2</sub>O<sub>3</sub> layer thickness (1.0 – 3.0 nm). A detailed analytical model and numerical simulation based on phase-field modeling, considering the ferroelectric polarization bound charge compensation by the injected/trapped interfacial carriers and the geometry effect of the cylinder, precisely identified the change of the inhomogeneous stray field energy, which played a crucial role in determining the capacitance state. Further analysis of the models revealed that the capacitance variation is strongly correlated to the extent of the initial polarization charge compensation of the ferroelectric domains and leakage mechanisms. This work provides guidelines for developing the next-generation capacitors in dynamic random access memory.</p>

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The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月14日

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  • Hyeon Woo Park,
  • Won-Tae Koo,
  • Dong Ik Suh,
  • Junseong Seo,
  • Panithan Sriboriboon,
  • Yunseok Kim,
  • Seungyong Byun,
  • Youngmo Kim,
  • Ja-Yong Kim,
  • Seung Wook Ryu,
  • Heeyoung Jeon,
  • Ki Vin Im,
  • Gwangyeob Lee,
  • Taeone Youn,
  • Seho Lee,
  • Jaeyun Yi,
  • Seon Yong Cha,
  • Cheol Seong Hwang

摘要

Due to a stray field formation from the alternating ferroelectric bound charges of the multidomain state of the ferroelectric thin films, the negative capacitance effect can emerge in the ferroelectric/dielectric bilayer devices. However, the capacitance behavior of the thin ferroelectric/dielectric stacked films in the nanoscale cylindrical structure deviated from the negative capacitance state to unpredicted other states. This work confirmed that the thin (2.0 – 3.0 nm) ferroelectric Hf0.33Zr0.67O2 layer could have a positive capacitance, infinite capacitance, or negative capacitance by controlling the thickness of the stacked dielectric Al2O3 layer thickness (1.0 – 3.0 nm). A detailed analytical model and numerical simulation based on phase-field modeling, considering the ferroelectric polarization bound charge compensation by the injected/trapped interfacial carriers and the geometry effect of the cylinder, precisely identified the change of the inhomogeneous stray field energy, which played a crucial role in determining the capacitance state. Further analysis of the models revealed that the capacitance variation is strongly correlated to the extent of the initial polarization charge compensation of the ferroelectric domains and leakage mechanisms. This work provides guidelines for developing the next-generation capacitors in dynamic random access memory.