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<p>Room-temperature ferroelectricity in two-dimensional semiconductors has ignited enormous interests due to their potential applications in non-volatile memory and neuromorphic computing, which will trigger a revolution in next-generation electronics. Nonetheless, this fascinating ferroelectricity is rarely discovered in such materials with natural central symmetry, especially at atomically thin limit. Here we disclose a room-temperature ferroelectricity with out-of-plane polarization in chemical vapor deposition synthesized two-dimensional α-MnS. The difference in thermal expansion coefficients between α-MnS and mica substrate leads to the evolution of dislocations in two-dimensional α-MnS, which induce the generation of tensile strain and the displacement of S atoms, thereby result in the emergence of ferroelectricity. In addition, the ferroelectric tunneling junction based on two-dimensional α-MnS exhibits large tunneling electroresistance (1.3 × 10<sup>4</sup>), high endurance (2.8 × 10<sup>3</sup> cycles), and long retention time (1 year). This work represents a substantial leap for developing two-dimensional ferroelectric semiconductors, which will stimulate the further exploration of ultrahigh-density information storage devices and computing-in-memory chips.</p>

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S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月22日

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  • Ling Huang,
  • Jialiang Wu,
  • Chen-Min Dai,
  • Ruofan Du,
  • Junbo Yang,
  • Yanan Peng,
  • Xiaohui Li,
  • Hang Sun,
  • Luying Song,
  • Yinuo Li,
  • Ruihan Xu,
  • Chuxuan Xiao,
  • Yulin Jiang,
  • Zhu Du,
  • Yuhang Li,
  • Yao Wen,
  • Jianping Shi,
  • Jun He

摘要

Room-temperature ferroelectricity in two-dimensional semiconductors has ignited enormous interests due to their potential applications in non-volatile memory and neuromorphic computing, which will trigger a revolution in next-generation electronics. Nonetheless, this fascinating ferroelectricity is rarely discovered in such materials with natural central symmetry, especially at atomically thin limit. Here we disclose a room-temperature ferroelectricity with out-of-plane polarization in chemical vapor deposition synthesized two-dimensional α-MnS. The difference in thermal expansion coefficients between α-MnS and mica substrate leads to the evolution of dislocations in two-dimensional α-MnS, which induce the generation of tensile strain and the displacement of S atoms, thereby result in the emergence of ferroelectricity. In addition, the ferroelectric tunneling junction based on two-dimensional α-MnS exhibits large tunneling electroresistance (1.3 × 104), high endurance (2.8 × 103 cycles), and long retention time (1 year). This work represents a substantial leap for developing two-dimensional ferroelectric semiconductors, which will stimulate the further exploration of ultrahigh-density information storage devices and computing-in-memory chips.