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<p>As semiconductor technology advances towards the 15-Å node and beyond, the back-end-of-line (BEOL) metal interconnect technology encounters severe scaling challenge, because the conventional barrier/liner TaN/Ta(Co) bilayer cannot be proportionally thinned down as the pitch size shrinks. This challenge arouses significant resistance-capacitance (RC) delay that is currently the bottleneck for advanced integrated circuits. Herein, we propose a Turing-patterned Ta<sub>2</sub>S<sub>3</sub> (Tp-Ta<sub>2</sub>S<sub>3</sub>) thin barrier to address the above interconnect scaling challenge. The Tp-Ta<sub>2</sub>S<sub>3</sub>, synthesized by a particularly designed energy-enhanced atomic layer deposition (ALD) process, features a labyrinthine stripe morphology with an intertwined layer structure, which can significantly enhance its Cu diffusion barrier performance by forcing the Cu atoms to migrate a significantly longer path through the 2D interlayer space. The synthesized Tp-Ta<sub>2</sub>S<sub>3</sub> barrier with only 1.2 nm thickness exhibits excellent Cu wettability, remarkably strong adhesion, and much better barrier performance than the state-of-the-art TaN barrier.</p>

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Turing-patterned Ta2S3 enables sub-2 nm diffusion barrier for advanced Cu interconnects

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月8日

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  • Xu Tian,
  • Songjie Yang,
  • Xiaoyu Liu,
  • Yupu Tang,
  • Shanshan Ju,
  • Renbo Lei,
  • Jinxiong Li,
  • Yuancan Ding,
  • Shengcheng Zhou,
  • Juntong Kang,
  • Yuyang Qiao,
  • Yi Zhou,
  • Runsheng Wang,
  • Ming Li,
  • Gaoda Chai,
  • Xinwei Wang

摘要

As semiconductor technology advances towards the 15-Å node and beyond, the back-end-of-line (BEOL) metal interconnect technology encounters severe scaling challenge, because the conventional barrier/liner TaN/Ta(Co) bilayer cannot be proportionally thinned down as the pitch size shrinks. This challenge arouses significant resistance-capacitance (RC) delay that is currently the bottleneck for advanced integrated circuits. Herein, we propose a Turing-patterned Ta2S3 (Tp-Ta2S3) thin barrier to address the above interconnect scaling challenge. The Tp-Ta2S3, synthesized by a particularly designed energy-enhanced atomic layer deposition (ALD) process, features a labyrinthine stripe morphology with an intertwined layer structure, which can significantly enhance its Cu diffusion barrier performance by forcing the Cu atoms to migrate a significantly longer path through the 2D interlayer space. The synthesized Tp-Ta2S3 barrier with only 1.2 nm thickness exhibits excellent Cu wettability, remarkably strong adhesion, and much better barrier performance than the state-of-the-art TaN barrier.