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<p>With the rapid advancement of multi-dimensional detection, there is an urgent demand for next-generation polarization detectors capable of achieving high responsivity, fast speed, and strong polarization sensitivity, metrics that are typically limited by fundamental trade-offs. Two-dimensional (2D) materials offer a promising platform, yet their weak intrinsic anisotropy constrains polarization ratio (PR) and overall device performance. Here, we report a mid-infrared (MIR) polarization photovoltage field-effect transistor (PPFET) based on black phosphorus/molybdenum disulfide (BP/MoS<sub>2</sub>) heterostructures that combines polarization detection and amplification within a single architecture. By exploiting gate-tunable transconductance in the linear amplification region, the device achieves a PR up to 510 via a “stretching” mechanism, while maintaining a polarization angle sensitivity (PAS) up to ~46.57 mA/(W·degree) and response times down to ~0.8 μs under 3.5 μm illumination. This combination of high polarization sensitivity, responsivity, and speed establishes PPFETs as a powerful platform for high-performance MIR polarization detection and paves the way for compact, high-precision imaging systems.</p>

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Polarization Photovoltage Transistor enabling Amplified Responsivity and Sensitivity

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月9日

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  • Jiayue Han,
  • Fakun Wang,
  • Chunyu Li,
  • Wenjie Deng,
  • Shi Zhang,
  • Libo Zhang,
  • Fangchen Hu,
  • Zhen Wang,
  • Hongxi Zhou,
  • He Yu,
  • Jun Gou,
  • Zhiming Wu,
  • Zhiming Wang,
  • Yadong Jiang,
  • Qi Jie Wang,
  • Jun Wang

摘要

With the rapid advancement of multi-dimensional detection, there is an urgent demand for next-generation polarization detectors capable of achieving high responsivity, fast speed, and strong polarization sensitivity, metrics that are typically limited by fundamental trade-offs. Two-dimensional (2D) materials offer a promising platform, yet their weak intrinsic anisotropy constrains polarization ratio (PR) and overall device performance. Here, we report a mid-infrared (MIR) polarization photovoltage field-effect transistor (PPFET) based on black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures that combines polarization detection and amplification within a single architecture. By exploiting gate-tunable transconductance in the linear amplification region, the device achieves a PR up to 510 via a “stretching” mechanism, while maintaining a polarization angle sensitivity (PAS) up to ~46.57 mA/(W·degree) and response times down to ~0.8 μs under 3.5 μm illumination. This combination of high polarization sensitivity, responsivity, and speed establishes PPFETs as a powerful platform for high-performance MIR polarization detection and paves the way for compact, high-precision imaging systems.