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<p>Passive memristor crossbars present a high-density and low-power platform for neuromorphic computing. Although perovskite memristors present advantages such as re-configurability between electrochemical metallization and valence change mechanisms compared to traditional oxides, they face issues with uniformity, variability, and filamentary instability, which impede their large-scale integration. This work demonstrates that these limitations are overcome by a three-dimensional perovskite nanowire array architecture, where a precisely engineered ITO barrier is instrumental in maintaining controlled, analog conductance modulation. The resulting memristors exhibit 139 non-overlapping Ohmic conduction states within an optimal analog range (10–100 µS), long retention ( &gt; 10⁶ s), endurance exceeding 4 × 10⁵ cycles, an asymmetric non-linearity factor of 0.3, and minimal variability (device-to-device &lt;5%, cycle-to-cycle &lt;1.5%). The memristors are further integrated into a 64 × 64 crossbar array and utilized in developing a fully integrated multi-layer perceptron for zebrafish head and jaw movement analysis, thereby establishing a scalable pathway for robust perovskite-based neuromorphic hardware.</p>

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Ultra-high density perovskite nanowire array memristor-based multi-layer perceptron

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月27日

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  • Swapnadeep Poddar,
  • Biswadeep Khan,
  • Shivam Kumar,
  • Jinghao Li,
  • Yucheng Ding,
  • Zhesi Chen,
  • Kaichen Wang,
  • Chenxi Jin,
  • Jinchen Wei,
  • Zhirong Peng,
  • On-mongkol Jaesiri,
  • Mansun Chan,
  • Julie L. Semmelhack,
  • Zhiyong Fan

摘要

Passive memristor crossbars present a high-density and low-power platform for neuromorphic computing. Although perovskite memristors present advantages such as re-configurability between electrochemical metallization and valence change mechanisms compared to traditional oxides, they face issues with uniformity, variability, and filamentary instability, which impede their large-scale integration. This work demonstrates that these limitations are overcome by a three-dimensional perovskite nanowire array architecture, where a precisely engineered ITO barrier is instrumental in maintaining controlled, analog conductance modulation. The resulting memristors exhibit 139 non-overlapping Ohmic conduction states within an optimal analog range (10–100 µS), long retention ( > 10⁶ s), endurance exceeding 4 × 10⁵ cycles, an asymmetric non-linearity factor of 0.3, and minimal variability (device-to-device <5%, cycle-to-cycle <1.5%). The memristors are further integrated into a 64 × 64 crossbar array and utilized in developing a fully integrated multi-layer perceptron for zebrafish head and jaw movement analysis, thereby establishing a scalable pathway for robust perovskite-based neuromorphic hardware.