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<p>Layered CuInP₂S₆ provides robust ferroelectric polarization and strong local fields, enabling low-voltage, nonvolatile modulation, multilevel states, and analog weight updates for neuromorphic devices. However, devices driven solely by CuInP₂S₆ suffer from limited tunability and single-mechanism control inadequate for large-scale complementary logic and heterogeneous integration. In this work, we construct a ferroelectric heterostructure that simultaneously regulates ferroelectric polarization and charge tunneling, enabling nonvolatile memory operation with an on/off ratio exceeding 10<sup>6</sup>, endurance up to 10<sup>5</sup> cycles, and stable retention of 16 distinct memory states for over 10<sup>3 </sup>s. The distinct modulation effects of polarization and tunneling on channel transport enable controllably reconfigurable adjustment, yielding a high diode rectification ratio. By exploiting the difference between the coercive voltage and the tunneling threshold, multimode regulation of junction configurations (including nn, np, pp, and pn junctions) is realized. In addition, the device achieves logic-in-memory functionality within a single cell. Such a coupled polarization dynamics and tunneling effect enables the device to achieve high integration, energy efficiency, and multifunctionality, effectively reducing circuit complexity for next-generation intelligent computing, sensing, and edge applications.</p>

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Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月16日

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  • Ce Li,
  • Tianze Yu,
  • Zirui Zhang,
  • Qingsong Deng,
  • Fei Hui,
  • Zhongrui Wang,
  • Mario Lanza,
  • Linfeng Sun

摘要

Layered CuInP₂S₆ provides robust ferroelectric polarization and strong local fields, enabling low-voltage, nonvolatile modulation, multilevel states, and analog weight updates for neuromorphic devices. However, devices driven solely by CuInP₂S₆ suffer from limited tunability and single-mechanism control inadequate for large-scale complementary logic and heterogeneous integration. In this work, we construct a ferroelectric heterostructure that simultaneously regulates ferroelectric polarization and charge tunneling, enabling nonvolatile memory operation with an on/off ratio exceeding 106, endurance up to 105 cycles, and stable retention of 16 distinct memory states for over 103 s. The distinct modulation effects of polarization and tunneling on channel transport enable controllably reconfigurable adjustment, yielding a high diode rectification ratio. By exploiting the difference between the coercive voltage and the tunneling threshold, multimode regulation of junction configurations (including nn, np, pp, and pn junctions) is realized. In addition, the device achieves logic-in-memory functionality within a single cell. Such a coupled polarization dynamics and tunneling effect enables the device to achieve high integration, energy efficiency, and multifunctionality, effectively reducing circuit complexity for next-generation intelligent computing, sensing, and edge applications.