<p>Magnetoelectric materials couple magnetic and electric properties and are promising candidates for future data storage applications. While a strong coupling between the two order parameters leads to cross-switchability, the separate actuation enables four different polarization states, offering prospects for a quaternary memory device, an auspicious high-density memory concept, especially in the post-Moore-law era. Here, we present a study on a bulk single-crystal of antiferromagnetic and ferrotoroidic LiNi<sub>0.8</sub>Fe<sub>0.2</sub>PO<sub>4</sub> in which a spontaneous tilt of the head-to-tail spin configuration leads to the presence of four different magnetic domains. Through Spherical Neutron Polarimetry, we deliver compelling evidence for a controlled preferential population of each of these four domains individually by applying perpendicular electric and magnetic fields. Our results suggest a new route towards the realization of high-density data storage devices based on single-phase antiferromagnetic materials.</p>

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Toroidicity as a route towards non-volatile quaternary memory in antiferromagnets

  • Navid Qureshi,
  • Adheena Painganoor,
  • Mikkel C. Larsen,
  • Mikkel Ravn-Feld,
  • Ketty Beauvois,
  • José Alberto Rodríguez-Velamazán,
  • David Vaknin,
  • Paul Steffens,
  • Rasmus Toft-Petersen,
  • Niels Bech Christensen

摘要

Magnetoelectric materials couple magnetic and electric properties and are promising candidates for future data storage applications. While a strong coupling between the two order parameters leads to cross-switchability, the separate actuation enables four different polarization states, offering prospects for a quaternary memory device, an auspicious high-density memory concept, especially in the post-Moore-law era. Here, we present a study on a bulk single-crystal of antiferromagnetic and ferrotoroidic LiNi0.8Fe0.2PO4 in which a spontaneous tilt of the head-to-tail spin configuration leads to the presence of four different magnetic domains. Through Spherical Neutron Polarimetry, we deliver compelling evidence for a controlled preferential population of each of these four domains individually by applying perpendicular electric and magnetic fields. Our results suggest a new route towards the realization of high-density data storage devices based on single-phase antiferromagnetic materials.