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<p>Two-dimensional ferromagnetic materials hold great promise for advancing low-power, high-integrated spintronic devices due to their atomic flat surfaces and versatile interfacial modulation. However, achieving a combination of room-temperature, field-free spin-orbit torque switching with tunable polarity in wafer-scale vdW heterostructures remains a significant challenge. Here, we demonstrate polarity-tunable, field-free spin-orbit torque switching in an all-vdW Bi<sub>2</sub>Te<sub>3</sub>/Fe<sub>4</sub>GeTe<sub>2</sub> heterostructure, grown by molecular beam epitaxy. Interfacial coupling induces perpendicular magnetic anisotropy in Bi<sub>2</sub>Te<sub>3</sub>/Fe<sub>4</sub>GeTe<sub>2</sub> interface, while the rest in-plane magnetic anisotropy component of Fe<sub>4</sub>GeTe<sub>2</sub> breaks the inversion symmetry, enabling field-free switching. By modulating the direction of in-plane component, magnetic switching with different polarity could be achieved at low current density (~1.55×10<sup>6</sup> A/cm<sup>2</sup>). This allows for 16 reconfigurable Boolean logic functions in a single device, paving a pathway for energy-efficient 2D spintronic memory and logic systems. Our findings highlight the potential of all-vdW spin-orbit torque devices to revolutionize spintronics with scalable, room-temperature electronic control.</p>

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Polarity-tunable field-free room-temperature spin orbit torque switching via topological symmetry breaking in an all-vdW heterostructure for spin logic applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月12日

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  • Fan Gao,
  • Zili Wang,
  • Runyu Zhao,
  • Jing Li,
  • Xiaoyue Song,
  • Peiyuan Yu,
  • Yun Sun,
  • Weiran Xie,
  • Guodong Wei,
  • Yuan Yao,
  • Jin Zou,
  • Jie Zhang,
  • Shucheng Xing,
  • Roberto Mantovan,
  • Zongxia Guo,
  • Nicolas Jaouen,
  • Weisheng Zhao,
  • Tianxiao Nie

摘要

Two-dimensional ferromagnetic materials hold great promise for advancing low-power, high-integrated spintronic devices due to their atomic flat surfaces and versatile interfacial modulation. However, achieving a combination of room-temperature, field-free spin-orbit torque switching with tunable polarity in wafer-scale vdW heterostructures remains a significant challenge. Here, we demonstrate polarity-tunable, field-free spin-orbit torque switching in an all-vdW Bi2Te3/Fe4GeTe2 heterostructure, grown by molecular beam epitaxy. Interfacial coupling induces perpendicular magnetic anisotropy in Bi2Te3/Fe4GeTe2 interface, while the rest in-plane magnetic anisotropy component of Fe4GeTe2 breaks the inversion symmetry, enabling field-free switching. By modulating the direction of in-plane component, magnetic switching with different polarity could be achieved at low current density (~1.55×106 A/cm2). This allows for 16 reconfigurable Boolean logic functions in a single device, paving a pathway for energy-efficient 2D spintronic memory and logic systems. Our findings highlight the potential of all-vdW spin-orbit torque devices to revolutionize spintronics with scalable, room-temperature electronic control.