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<p>Ultrabroadband integrated modulators involving materials beyond those available in silicon manufacturing increasingly rely on the Pockels effect. Among electro-optic materials, lithium tantalate offers comparable Pockels coefficients to lithium niobate but with significantly improved photostability, lower birefringence, higher optical damage threshold, and enhanced DC bias stability. Here we demonstrate wafer-scale heterogeneous integration of lithium tantalate films on low-loss silicon nitride photonic integrated circuits, achieving low optical losses (&#xa0;~ 14.2 dB/m) while combining the mature processing of silicon nitride waveguides with the ultrafast electro-optic response of thin-film lithium tantalate. The resulting devices achieve a 6 <i>V</i> half-wave voltage, and support modulation bandwidths of up to 100 GHz. We use single intensity modulators and in-phase/quadrature (IQ) modulators to transmit PAM4 and 16-QAM signals reaching up to 333 and 581 Gbit/s net data rates, respectively. Our results establish lithium tantalate-on-silicon nitride as a viable platform for RF photonics, interconnects, and analog signal processing.</p>

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Heterogeneously integrated lithium tantalate-on-silicon nitride modulators for high-speed communications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月28日

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  • Jiachen Cai,
  • Alexander Kotz,
  • Hugo Larocque,
  • Chengli Wang,
  • Xinru Ji,
  • Junyin Zhang,
  • Daniel Drayss,
  • Jiale Sun,
  • Shuhang Zheng,
  • Xin Ou,
  • Christian Koos,
  • Tobias J. Kippenberg

摘要

Ultrabroadband integrated modulators involving materials beyond those available in silicon manufacturing increasingly rely on the Pockels effect. Among electro-optic materials, lithium tantalate offers comparable Pockels coefficients to lithium niobate but with significantly improved photostability, lower birefringence, higher optical damage threshold, and enhanced DC bias stability. Here we demonstrate wafer-scale heterogeneous integration of lithium tantalate films on low-loss silicon nitride photonic integrated circuits, achieving low optical losses ( ~ 14.2 dB/m) while combining the mature processing of silicon nitride waveguides with the ultrafast electro-optic response of thin-film lithium tantalate. The resulting devices achieve a 6 V half-wave voltage, and support modulation bandwidths of up to 100 GHz. We use single intensity modulators and in-phase/quadrature (IQ) modulators to transmit PAM4 and 16-QAM signals reaching up to 333 and 581 Gbit/s net data rates, respectively. Our results establish lithium tantalate-on-silicon nitride as a viable platform for RF photonics, interconnects, and analog signal processing.