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<p>Nanodiamonds (NDs) are key materials for building nanoscale quantum sensing, imaging and communication devices. Scalable configuration of single NDs on heterogeneous platforms, forming quantum emitter arrays, will be an essential solution towards realizing next-generation scalable quantum devices. However, NDs are challenging to manipulate because their size, shape and surface chemistry vary substantially. Here, we show a simple method based on electrostatic-trapping to rapidly and reliably pattern single ND arrays on arbitrary substrates at scale. Our method, which uses carefully engineered microscale hole templates and electrostatic force, captures single NDs across 8-inch wafers with 82.5% yields within 5 min. Systematic experimental and theoretical studies show the number of deposited NDs primarily depends on the diameter of the hole trap. The method is compatible with mature CMOS technologies, enabling the mass production of scalable and integrable quantum devices. This advancement is expected to accelerate the commercialization and industrial adoption of ND-based technologies.</p>

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Wafer-scale integration of single nanodiamonds via electrostatic-trapping

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年2月11日

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  • Jixiang Jing,
  • Yicheng Wang,
  • Zhuoran Wang,
  • Yumeng Luo,
  • Linjie Ma,
  • Tongtong Zhang,
  • Chunlin Song,
  • Jiangyu Li,
  • Kwai Hei Li,
  • Dong-Keun Ki,
  • Ji Tae Kim,
  • Zhiqin Chu

摘要

Nanodiamonds (NDs) are key materials for building nanoscale quantum sensing, imaging and communication devices. Scalable configuration of single NDs on heterogeneous platforms, forming quantum emitter arrays, will be an essential solution towards realizing next-generation scalable quantum devices. However, NDs are challenging to manipulate because their size, shape and surface chemistry vary substantially. Here, we show a simple method based on electrostatic-trapping to rapidly and reliably pattern single ND arrays on arbitrary substrates at scale. Our method, which uses carefully engineered microscale hole templates and electrostatic force, captures single NDs across 8-inch wafers with 82.5% yields within 5 min. Systematic experimental and theoretical studies show the number of deposited NDs primarily depends on the diameter of the hole trap. The method is compatible with mature CMOS technologies, enabling the mass production of scalable and integrable quantum devices. This advancement is expected to accelerate the commercialization and industrial adoption of ND-based technologies.