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<p>Microwave sources are central to modern technologies ranging from radar and directed energy to medical applications, yet conventional electronic approaches face long-standing trade-offs between output power and tunability. Optoelectronic techniques offer a promising alternative by combining the broad bandwidth of optical systems with the high power-handling capability of wide-bandgap semiconductors. Here we show an optoelectronic microwave source based on fast-response silicon carbide, enabling picosecond-scale control of photogenerated carrier lifetime while sustaining power-handling capacities up to 55 MW. The system generates continuously tunable pulsed microwave emission across the P–L band, delivering peak output power exceeding 1 MW over the 0.25–1.3 GHz range and exhibiting stable nanosecond-scale pulse operation. The generated pulses exhibit low timing jitter and highly efficient power combining in array operation. These results demonstrate a scalable route toward high-power, broadband, and flexible microwave sources, enabling applications that demand simultaneous control over frequency, energy, and spatial distribution.</p>

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A pulsed optoelectronic microwave source with high power and frequency tunability

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月21日

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  • Xinyue Niu,
  • Langning Wang,
  • Bin Zhang,
  • Junpu Ling,
  • Qian Zhang,
  • Muyu Yi,
  • Jinmei Yao,
  • Jing Hou,
  • Hanwu Yang,
  • Xiaotao Xu,
  • Bo Jiang,
  • Juntao He,
  • Jinliang Liu,
  • Jiande Zhang,
  • Hui Jing,
  • Tao Xun,
  • Jun Zhang

摘要

Microwave sources are central to modern technologies ranging from radar and directed energy to medical applications, yet conventional electronic approaches face long-standing trade-offs between output power and tunability. Optoelectronic techniques offer a promising alternative by combining the broad bandwidth of optical systems with the high power-handling capability of wide-bandgap semiconductors. Here we show an optoelectronic microwave source based on fast-response silicon carbide, enabling picosecond-scale control of photogenerated carrier lifetime while sustaining power-handling capacities up to 55 MW. The system generates continuously tunable pulsed microwave emission across the P–L band, delivering peak output power exceeding 1 MW over the 0.25–1.3 GHz range and exhibiting stable nanosecond-scale pulse operation. The generated pulses exhibit low timing jitter and highly efficient power combining in array operation. These results demonstrate a scalable route toward high-power, broadband, and flexible microwave sources, enabling applications that demand simultaneous control over frequency, energy, and spatial distribution.