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<p>Precise control of interfaces is crucial for spin generation, transport, and detection in opto-spintronics. However, the interface engineering for efficient spin injection remains a significant challenge. Here, we synthesized a helical structure of PbI<sub>2</sub> (<i>R</i>-PbI<sub>2</sub>) via an interfacial chirality-induced growth approach at the heterostructure interface. This few-nanometer-thick <i>R</i>-PbI<sub>2</sub> layer shows a lower lattice mismatch with both the adjacent <i>R-</i>NEAPbI<sub>3</sub> (<i>R-</i>NEA refers to <i>R</i>-1-(1-naphtyl)ethylamine) and PbI<sub>2</sub> layers, and leads to an optimal chiral interface in the chiral heterostructure with minimized residual strain and defect density. Combined with circularly polarized pump-probe spectroscopic and spin-photovoltaic measurements, our chiral heterostructure interface contributes a spin-injection efficiency up to 68%, thus leading to a degree of polarization of 29% in photocurrent. The precise synthesis of a chiral interface offers a promising route to manipulate spin dynamics and achieve a high degree of spin polarization required for advanced opto-spintronic applications.</p>

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Precision engineering chiral interfaces for efficient spin injection in metal halide heterostructures

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月20日

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  • Jin Xiao,
  • Yang Li,
  • Yanan Liu,
  • Jing Li,
  • Li Fang,
  • Haofeng Zheng,
  • Yanlong Wang,
  • Qi Liu,
  • Xuyu Ma,
  • Shuai Pang,
  • Jing Hu,
  • Jianbo Wang,
  • Shaocong Hou

摘要

Precise control of interfaces is crucial for spin generation, transport, and detection in opto-spintronics. However, the interface engineering for efficient spin injection remains a significant challenge. Here, we synthesized a helical structure of PbI2 (R-PbI2) via an interfacial chirality-induced growth approach at the heterostructure interface. This few-nanometer-thick R-PbI2 layer shows a lower lattice mismatch with both the adjacent R-NEAPbI3 (R-NEA refers to R-1-(1-naphtyl)ethylamine) and PbI2 layers, and leads to an optimal chiral interface in the chiral heterostructure with minimized residual strain and defect density. Combined with circularly polarized pump-probe spectroscopic and spin-photovoltaic measurements, our chiral heterostructure interface contributes a spin-injection efficiency up to 68%, thus leading to a degree of polarization of 29% in photocurrent. The precise synthesis of a chiral interface offers a promising route to manipulate spin dynamics and achieve a high degree of spin polarization required for advanced opto-spintronic applications.