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<p>The discovery of silver chalcogenides ductile semiconductors with high room-temperature plasticity holds significant promise for the development of bendable thermoelectric and electronic devices. However, the atomic-scale origins of their plasticity, ranging from dislocation slip to sublattice amorphization, remain diverse and material-specific. Here, we report a distinct deformation mechanism in Ag<sub>2</sub>Te through stress-driven and ionic-hop-mediated domain rotation. By in-situ scanning/transmission electron microscopy (S/TEM), we directly observe the hopping of Ag ions to adjacent vacancies stabilizes the deformed Te-sublattice and facilitates a coordinated ~92.2° lattice rotation that accommodates substantial plastic strain. This mechanism, which preserves long-range crystallinity, contrasts with both traditional dislocation-mediated plasticity and stress-induced amorphization pathways. Combined with its excellent thermoelectric performance (ZT value of ~0.67) at room temperature, Ag<sub>2</sub>Te emerges as a promising flexible electronic material.</p>

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Room-temperature plasticity in Ag2Te induced by Ag ions hopping

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月5日

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  • Anan Guo,
  • Keke Liu,
  • Zhengzhou Wang,
  • Lingxiao Yu,
  • Yongqiang Li,
  • Lin Liao,
  • Dongwang Yang,
  • Xianli Su,
  • Xiahan Sang,
  • Xinfeng Tang,
  • Qingjie Zhang,
  • Jinsong Wu

摘要

The discovery of silver chalcogenides ductile semiconductors with high room-temperature plasticity holds significant promise for the development of bendable thermoelectric and electronic devices. However, the atomic-scale origins of their plasticity, ranging from dislocation slip to sublattice amorphization, remain diverse and material-specific. Here, we report a distinct deformation mechanism in Ag2Te through stress-driven and ionic-hop-mediated domain rotation. By in-situ scanning/transmission electron microscopy (S/TEM), we directly observe the hopping of Ag ions to adjacent vacancies stabilizes the deformed Te-sublattice and facilitates a coordinated ~92.2° lattice rotation that accommodates substantial plastic strain. This mechanism, which preserves long-range crystallinity, contrasts with both traditional dislocation-mediated plasticity and stress-induced amorphization pathways. Combined with its excellent thermoelectric performance (ZT value of ~0.67) at room temperature, Ag2Te emerges as a promising flexible electronic material.