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<p>High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we report the realization of 1.3-nm thick hafnium oxide (HfO<sub>2</sub>) dielectrics via an industry-compatible multiple oxidation atomic layer deposition process at 200 °C. A low EOT down to 2.5 Å is demonstrated for 1.3-nm thick HfO<sub>2</sub> dielectrics on metal gates with a low leakage current of 10<sup>−6</sup> A/cm<sup>2</sup> and a robust breakdown electric field of ~22.3 MV/cm. Remarkably, such low EOT high-κ/metal gates can be directly implanted into emerging two-dimensional (2D) transistors and low-power logic circuits on 8-inch wafer scale to showcase their potentials. The as-fabricated molybdenum disulfide (MoS<sub>2</sub>) transistors exhibit a large on-state current density of 260 µA/µm at source-drain bias of 0.5 V, a high on/off ratio of 10<sup>8</sup>, an average subthreshold slope (SS) of 75 mV/dec, and small capacitance equivalent thickness (CET) values of 0.34 nm for gate-first transistors and 0.50 nm for gate-last transistors. Our ultra-scaled dielectrics hold significant promise for advanced semiconductor fabrication processes towards the angstrom era.</p>

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Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月20日

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  • Songge Zhang,
  • Tao Zhang,
  • Hua Yu,
  • Tong Li,
  • Xiuzhen Li,
  • Chenyang Cui,
  • Yuchao Zhou,
  • Hailing Guo,
  • Shuopei Wang,
  • Dongfeng Zheng,
  • Liangfeng Huang,
  • Liqi Bai,
  • Su Liu,
  • Cheng Shen,
  • Wei Yang,
  • Luojun Du,
  • Dongxia Shi,
  • Lede Xian,
  • Xiaoming Tao,
  • Yang Chai,
  • Na Li,
  • Guangyu Zhang

摘要

High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we report the realization of 1.3-nm thick hafnium oxide (HfO2) dielectrics via an industry-compatible multiple oxidation atomic layer deposition process at 200 °C. A low EOT down to 2.5 Å is demonstrated for 1.3-nm thick HfO2 dielectrics on metal gates with a low leakage current of 10−6 A/cm2 and a robust breakdown electric field of ~22.3 MV/cm. Remarkably, such low EOT high-κ/metal gates can be directly implanted into emerging two-dimensional (2D) transistors and low-power logic circuits on 8-inch wafer scale to showcase their potentials. The as-fabricated molybdenum disulfide (MoS2) transistors exhibit a large on-state current density of 260 µA/µm at source-drain bias of 0.5 V, a high on/off ratio of 108, an average subthreshold slope (SS) of 75 mV/dec, and small capacitance equivalent thickness (CET) values of 0.34 nm for gate-first transistors and 0.50 nm for gate-last transistors. Our ultra-scaled dielectrics hold significant promise for advanced semiconductor fabrication processes towards the angstrom era.