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<p>Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising material platform for non-volatile memories, offering high polarization values exceeding 100 μC/cm<sup>2</sup>. However, their high coercive fields (&gt;3 MV/cm) have limited cycling endurance to ~10<sup>7</sup> cycles in previous reports. Here, we demonstrate unprecedented control of polarization switching in AlScN, achieving write cycling endurance exceeding 10<sup>10</sup> cycles—a thousand-fold improvement over previous wurtzite ferroelectric benchmarks. Through precise voltage modulation in 45 nm-thick Al<sub>0.64</sub>Sc<sub>0.36</sub>N capacitors, we show that while complete polarization reversal (2P<sub>r</sub> ≈ 200 μC/cm<sup>2</sup>) sustains ~10<sup>8</sup> cycles, partial switching extends endurance beyond 10<sup>10</sup> cycles while maintaining a substantial polarization (&gt;30 μC/cm<sup>2</sup> for 2P<sub>r</sub>). This exceptional endurance, combined with breakdown fields approaching 10 MV/cm in optimized 10 μm diameter devices, represents the highest reported values for any wurtzite ferroelectric. Our findings establish a new paradigm for reliability in nitride ferroelectrics, demonstrating that controlled partial polarization and size scaling enables both high endurance and energy-efficient operation.</p>

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Write cycling endurance exceeding 1010 in sub-50 nm ferroelectric AlScN

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月9日

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  • Hyunmin Cho,
  • Yubo Wang,
  • Chloe Leblanc,
  • Yinuo Zhang,
  • Yunfei He,
  • Zirun Han,
  • Xiaolei Tong,
  • Vidhu D. Bulumulla,
  • Jonathan Tan,
  • Roy H. Olsson III,
  • Deep Jariwala

摘要

Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising material platform for non-volatile memories, offering high polarization values exceeding 100 μC/cm2. However, their high coercive fields (>3 MV/cm) have limited cycling endurance to ~107 cycles in previous reports. Here, we demonstrate unprecedented control of polarization switching in AlScN, achieving write cycling endurance exceeding 1010 cycles—a thousand-fold improvement over previous wurtzite ferroelectric benchmarks. Through precise voltage modulation in 45 nm-thick Al0.64Sc0.36N capacitors, we show that while complete polarization reversal (2Pr ≈ 200 μC/cm2) sustains ~108 cycles, partial switching extends endurance beyond 1010 cycles while maintaining a substantial polarization (>30 μC/cm2 for 2Pr). This exceptional endurance, combined with breakdown fields approaching 10 MV/cm in optimized 10 μm diameter devices, represents the highest reported values for any wurtzite ferroelectric. Our findings establish a new paradigm for reliability in nitride ferroelectrics, demonstrating that controlled partial polarization and size scaling enables both high endurance and energy-efficient operation.