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<p>Polarization-sensitive photodetection and non-volatile memory are both vital for neuromorphic vision hardware but are rarely integrated within a single device. This challenge arises from interfacial instabilities and depolarization fields at the 2D/ferroelectric junctions that degrade remanent polarization and long-term retention. Here, we demonstrate a polarization-resolved optoelectronic synapse based on a 2D ReS<sub>2</sub> channel and a ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) gate dielectric in a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ferroelectric field-effect transistor (FeFET). Co-modulation of ferroelectric polarization and photoexcited carrier trapping enables high responsivity, strong detectivity, and long-term optoelectronic retention. Coupling between the polarization anisotropy of ReS<sub>2</sub> and ferroelectric memristive states enables gate-tunable polarization ratios and polarization-resolved learning. Furthermore, the optoelectronic synapse exhibits linear and energy-efficient optical–electrical modulation with 2.0 fJ per event. An ANN built from these synapses achieves 97.33% accuracy in iris recognition under unpolarized light, while a 3×3 FeFET-based CNN performs butterfly classification under polarized illumination through polarization-resolved feature extraction. This work establishes a unified ferroelectric-anisotropic platform for energy-efficient, polarization-resolved neuromorphic vision.</p>

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Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月8日

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  • Jiali Huo,
  • Jinpeng Huo,
  • Jing Gao,
  • Lingqi Li,
  • Thaw Tint Te Tun,
  • Jin Peng,
  • Haofei Zheng,
  • Yufei Shi,
  • Kah-Wee Ang

摘要

Polarization-sensitive photodetection and non-volatile memory are both vital for neuromorphic vision hardware but are rarely integrated within a single device. This challenge arises from interfacial instabilities and depolarization fields at the 2D/ferroelectric junctions that degrade remanent polarization and long-term retention. Here, we demonstrate a polarization-resolved optoelectronic synapse based on a 2D ReS2 channel and a ferroelectric Hf0.5Zr0.5O2 (HZO) gate dielectric in a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ferroelectric field-effect transistor (FeFET). Co-modulation of ferroelectric polarization and photoexcited carrier trapping enables high responsivity, strong detectivity, and long-term optoelectronic retention. Coupling between the polarization anisotropy of ReS2 and ferroelectric memristive states enables gate-tunable polarization ratios and polarization-resolved learning. Furthermore, the optoelectronic synapse exhibits linear and energy-efficient optical–electrical modulation with 2.0 fJ per event. An ANN built from these synapses achieves 97.33% accuracy in iris recognition under unpolarized light, while a 3×3 FeFET-based CNN performs butterfly classification under polarized illumination through polarization-resolved feature extraction. This work establishes a unified ferroelectric-anisotropic platform for energy-efficient, polarization-resolved neuromorphic vision.