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<p>Single-crystal alloy thin films (SATFs), featuring highly ordered atomic lattices and superior composition-dependent properties, hold great potential for applications including crystal epitaxy, surface catalysis, and energy conversion. However, their scalable synthesis and practical applications have been hindered by the difficulty of achieving wafer-scale single crystallinity, atomic-scale surface flatness, as well as flexible and uniform control of alloy composition. Here, we developed a surface-energy-compensated technique for synthesizing a series of wafer-scale binary and ternary SATFs with sub-nanometer roughness (minimum roughness lower than 0.2 nm) and uniform, controllable elemental composition with a wide range (5 ~ 50 at%). Furthermore, using CuPtNi(111) ternary SATFs as epitaxial substrates, we achieve wafer-scale synthesis of wrinkle-free graphene single crystals exhibiting fine electronic quality, including a uniform sheet resistance of 552&#xa0;Ω&#xa0;sq<sup>−1</sup> with 4.5% deviation, an ultrahigh carrier mobility up to over half a million cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> at 1.7 K, and well-developed quantum plateaus.</p>

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Surface-energy-compensated fabrication of single-crystal alloy films with atomic-scale flatness

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月7日

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  • Jiaxin Shao,
  • Sheng Li,
  • Zhuofeng Shi,
  • Yue Sun,
  • Mengyuan Liu,
  • Xiumei Ma,
  • Guangcun Gao,
  • Shiwei Wang,
  • Yunsong Ge,
  • Bo Jin,
  • Dapeng Zhang,
  • Weichuan Chen,
  • Junhao Liao,
  • Ali Cai,
  • Bo Yang,
  • Hao Li,
  • Jincan Zhang,
  • Xiucai Sun,
  • Mengxi Liu,
  • Li Lin,
  • Kaicheng Jia,
  • Zhongfan Liu

摘要

Single-crystal alloy thin films (SATFs), featuring highly ordered atomic lattices and superior composition-dependent properties, hold great potential for applications including crystal epitaxy, surface catalysis, and energy conversion. However, their scalable synthesis and practical applications have been hindered by the difficulty of achieving wafer-scale single crystallinity, atomic-scale surface flatness, as well as flexible and uniform control of alloy composition. Here, we developed a surface-energy-compensated technique for synthesizing a series of wafer-scale binary and ternary SATFs with sub-nanometer roughness (minimum roughness lower than 0.2 nm) and uniform, controllable elemental composition with a wide range (5 ~ 50 at%). Furthermore, using CuPtNi(111) ternary SATFs as epitaxial substrates, we achieve wafer-scale synthesis of wrinkle-free graphene single crystals exhibiting fine electronic quality, including a uniform sheet resistance of 552 Ω sq−1 with 4.5% deviation, an ultrahigh carrier mobility up to over half a million cm2 V−1 s−1 at 1.7 K, and well-developed quantum plateaus.