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<p>Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled crystal and spin symmetry provides a unique way for the flexible and efficient control of the polarization and flow directions of the spin current. Here, by integrating the potential altermagnetic (101)-RuO<sub>2</sub> writing channel with the magnetic tunnel junction (MTJ) device, we demonstrate the all-electrical field-free altermagnetic spin splitting torque (SST)-driven switching of the perpendicular-MTJ in the 3-terminal altermagnetic SST-MRAM device, with the tilted spin polarization and the transversal flow of the spin current. The <i>z</i>-spin torque is further characterized by the altermagnetic SST-induced shift of the magnetic hysteresis loop, and the field-free altermagnetic SST-driven magnetic domain switching of the recording layer is directly observed by the magneto-optic Kerr effect (MOKE) microscope. Our research establishes groundwork for advancing the development of the altermagnetic SST-MRAM, paving the way for the future all-electrical, energy-efficient and high-endurance MRAM applications with separated writing/reading channels.</p>

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Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月30日

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  • Yaqin Guo,
  • Aitian Chen,
  • Zhaozhuo Zeng,
  • Tai An,
  • Qirui Cui,
  • Yonglong Ga,
  • Dongxing Zheng,
  • Xiao Deng,
  • Xu Zhang,
  • Meng Tang,
  • Zengtai Zhu,
  • Chuangwen Wu,
  • Jing Zhang,
  • Yibo Fan,
  • Zhe Wang,
  • Wenjie Song,
  • Peng Yan,
  • Tao Zhu,
  • Shouguo Wang,
  • Xiufeng Han,
  • Jinkui Zhao,
  • Kang L. Wang,
  • Guoqiang Yu,
  • Xixiang Zhang,
  • Hao Wu

摘要

Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled crystal and spin symmetry provides a unique way for the flexible and efficient control of the polarization and flow directions of the spin current. Here, by integrating the potential altermagnetic (101)-RuO2 writing channel with the magnetic tunnel junction (MTJ) device, we demonstrate the all-electrical field-free altermagnetic spin splitting torque (SST)-driven switching of the perpendicular-MTJ in the 3-terminal altermagnetic SST-MRAM device, with the tilted spin polarization and the transversal flow of the spin current. The z-spin torque is further characterized by the altermagnetic SST-induced shift of the magnetic hysteresis loop, and the field-free altermagnetic SST-driven magnetic domain switching of the recording layer is directly observed by the magneto-optic Kerr effect (MOKE) microscope. Our research establishes groundwork for advancing the development of the altermagnetic SST-MRAM, paving the way for the future all-electrical, energy-efficient and high-endurance MRAM applications with separated writing/reading channels.