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<p>The escalating capacity limitations of conventional near-infrared telecommunication bands have spurred urgent investigations into wide-band optical communication systems spanning from the near-infrared to mid-infrared regimes. This has motivated the development of optical components combining broadband bandwidth with high-speed operation. The state-of-the-art modulators face challenges in achieving broad operational bandwidth due to waveguide dispersion and velocity mismatch. Here we demonstrate a thin-film lithium niobate (TFLN) electro-optic (EO) modulator with an unprecedented 800-nm operational bandwidth, covering the full O-U telecom bands and extending into the 2-μm regime. The TFLN modulator exhibits &gt;67 GHz EO bandwidth across O-U bands (~100 GHz at O-/S-/C-/L-bands) and &gt;50 GHz at 2-μm band. It enables single-lane exceeding 240 Gbps PAM-4 transmission across O-U bands and a record 170 Gbps PAM-4 transmission at 2-μm band. This breakthrough establishes TFLN as a compelling platform for multispectral photonics, bridging conventional telecom infrastructure with emerging 2-μm technologies for next-generation optical communications.</p>

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Ultra-broadband near- to mid-infrared electro-optic modulator on thin-film lithium niobate

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月8日

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  • Qiyuan Li,
  • Qiyuan Yi,
  • Aolong Sun,
  • Chenglin Shang,
  • Yiqi Dai,
  • Sizhe Xing,
  • Jinlai Cui,
  • Yupeng Zhu,
  • Jiayi Li,
  • Jun Zheng,
  • Junwen Zhang,
  • Nan Chi,
  • An Pan,
  • Cheng Zeng,
  • Jinsong Xia,
  • Shuang Zheng,
  • Li Shen,
  • Minming Zhang

摘要

The escalating capacity limitations of conventional near-infrared telecommunication bands have spurred urgent investigations into wide-band optical communication systems spanning from the near-infrared to mid-infrared regimes. This has motivated the development of optical components combining broadband bandwidth with high-speed operation. The state-of-the-art modulators face challenges in achieving broad operational bandwidth due to waveguide dispersion and velocity mismatch. Here we demonstrate a thin-film lithium niobate (TFLN) electro-optic (EO) modulator with an unprecedented 800-nm operational bandwidth, covering the full O-U telecom bands and extending into the 2-μm regime. The TFLN modulator exhibits >67 GHz EO bandwidth across O-U bands (~100 GHz at O-/S-/C-/L-bands) and >50 GHz at 2-μm band. It enables single-lane exceeding 240 Gbps PAM-4 transmission across O-U bands and a record 170 Gbps PAM-4 transmission at 2-μm band. This breakthrough establishes TFLN as a compelling platform for multispectral photonics, bridging conventional telecom infrastructure with emerging 2-μm technologies for next-generation optical communications.