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<p>In advanced integrated circuits, signal transmission delay arising from interconnect resistance is a main problem hindering the development of electronic devices, while the conventional several-nanometer-thick TaN/Ta barrier with high resistivity causes a surge in interconnect resistance due to the size effect. To address this issue, it is crucial to develop Cu barrier materials. Here, we design an integrated ultra-thin Cu diffusion barrier (~1.4 nm) consisting of single-atom Ru-supported reduced graphene oxide (Ru SA-rGO) and self-assembled monolayer (SAM) derived from (3-aminopropyl)triethoxysilane, which combines the dual functions of liner and barrier. The supporting of Ru requires N-doping as a bridge. Remarkably, the mean time-to-failure of devices with Ru SA-rGO/SAM is approximately 24 times longer than barrier-free devices. Ru atoms can both physically block Cu diffusion by filling rGO vacancies and chemically capture Cu through enhanced adsorption. Our work provides insight into diffusion barrier development in advanced Cu interconnects.</p>

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Single atom Ru-supported reduced graphene oxide integrated self-assembled monolayer as a nm-scale Cu diffusion barrier

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月20日

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  • Sibo Zhao,
  • Dewei Zhang,
  • Guoxiang Cui,
  • Xiangyu Ren,
  • Shenghong Ju,
  • Tao Hang,
  • Ming Li,
  • Yunwen Wu

摘要

In advanced integrated circuits, signal transmission delay arising from interconnect resistance is a main problem hindering the development of electronic devices, while the conventional several-nanometer-thick TaN/Ta barrier with high resistivity causes a surge in interconnect resistance due to the size effect. To address this issue, it is crucial to develop Cu barrier materials. Here, we design an integrated ultra-thin Cu diffusion barrier (~1.4 nm) consisting of single-atom Ru-supported reduced graphene oxide (Ru SA-rGO) and self-assembled monolayer (SAM) derived from (3-aminopropyl)triethoxysilane, which combines the dual functions of liner and barrier. The supporting of Ru requires N-doping as a bridge. Remarkably, the mean time-to-failure of devices with Ru SA-rGO/SAM is approximately 24 times longer than barrier-free devices. Ru atoms can both physically block Cu diffusion by filling rGO vacancies and chemically capture Cu through enhanced adsorption. Our work provides insight into diffusion barrier development in advanced Cu interconnects.