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<p>Gallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high thermal-resistances at the nucleation layer-substrate interface and thick nitride layers. Here, we propose induced nucleation by implementing ion-implantation on silicon-carbide substrate to create nano- to microscale surface nucleation-sites. This approach suppresses conventional island-like nucleation, enabling rapid film coalescence and aggressive reduction in buffer layer thickness while maintaining low dislocation density. Therefore, a low thermal-resistance of 3.9 m²K/GW for the entire epitaxial stack is achieved, three times lower than previous reports in various high-electron-mobility-transistor epi-structures. Gallium-nitride transistors demonstrate a record Johnson’s Figure-of-Merit of 20.6 THz·V, an output-power-density of 42/20 W/mm at 8/30 GHz, representing a 30%/43% improvement over prior highest output-power-density for all X-/Ka-band transistors, respectively. This result manifests the implantation-induced nucleation strategy as a promising approach for advancing Gallium-nitride heteroepitaxy for RF electronics.</p>

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High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月18日

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  • Hong Zhou,
  • Chaoqun Zhang,
  • Kun Zhang,
  • Zifeng Huang,
  • Fang Liu,
  • Min Zhou,
  • Hehe Gong,
  • Shijun Tang,
  • Wenjun Liu,
  • Baiqi Wang,
  • Yaolong Dong,
  • Jinwen Liu,
  • Shutong Zhou,
  • Zuyin Xu,
  • Shuai Wang,
  • Zhihong Liu,
  • Shengrui Xu,
  • Chunfu Zhang,
  • Xinqiang Wang,
  • Han Wang,
  • Yachao Zhang,
  • Zhe Cheng,
  • Tangsheng Chen,
  • Yuhao Zhang,
  • Yue Hao,
  • Jincheng Zhang

摘要

Gallium-nitride high-electron-mobility-transistor is an industrial leading contender for high-frequency and high-power radio-frequency applications. However, the record output-power-density has remained stagnant for nearly two decades, limited by high thermal-resistances at the nucleation layer-substrate interface and thick nitride layers. Here, we propose induced nucleation by implementing ion-implantation on silicon-carbide substrate to create nano- to microscale surface nucleation-sites. This approach suppresses conventional island-like nucleation, enabling rapid film coalescence and aggressive reduction in buffer layer thickness while maintaining low dislocation density. Therefore, a low thermal-resistance of 3.9 m²K/GW for the entire epitaxial stack is achieved, three times lower than previous reports in various high-electron-mobility-transistor epi-structures. Gallium-nitride transistors demonstrate a record Johnson’s Figure-of-Merit of 20.6 THz·V, an output-power-density of 42/20 W/mm at 8/30 GHz, representing a 30%/43% improvement over prior highest output-power-density for all X-/Ka-band transistors, respectively. This result manifests the implantation-induced nucleation strategy as a promising approach for advancing Gallium-nitride heteroepitaxy for RF electronics.