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<p>Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation – in number, position, and coherence – in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen <i>δ</i>-doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report a positioning precision of &#xa0;~&#xa0;4&#xa0;nm in depth and 46(1) nm laterally in 280 nm-diameter pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41467_2025_64758_Article_IEq1.gif" Format="GIF" Height="21" Rendition="HTML" Resolution="72" Type="Linedraw" Width="102" /> </InlineMediaObject> <EquationSource Format="TEX">\({T}_{2}^{Hahn}=98\, \mu {{{\rm{s}}}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msubsup> <mrow> <mi>T</mi> </mrow> <mrow> <mn>2</mn> </mrow> <mrow> <mi>H</mi> <mi>a</mi> <mi>h</mi> <mi>n</mi> </mrow> </msubsup> <mo>=</mo> <mn>98</mn> <mspace width="0.25em" /> <mi>μ</mi> <mi mathvariant="normal">s</mi> </math></EquationSource> </InlineEquation>) and higher average photoluminescence compared to NV centers randomly positioned in pillars. Our method can improve the performance of various NV-based devices. In the realm of magnetic sensing, we achieve a 3&#xa0;× improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.</p>

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Scalable nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月6日

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  • Sunghoon Kim,
  • Paz London,
  • Daipeng Yang,
  • Lillian B. Hughes,
  • Jeffrey Ahlers,
  • Simon Meynell,
  • William J. Mitchell,
  • Kunal Mukherjee,
  • Ania C. Bleszynski Jayich

摘要

Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation – in number, position, and coherence – in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen δ-doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report a positioning precision of  ~ 4 nm in depth and 46(1) nm laterally in 280 nm-diameter pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average \({T}_{2}^{Hahn}=98\, \mu {{{\rm{s}}}}\) T 2 H a h n = 98 μ s ) and higher average photoluminescence compared to NV centers randomly positioned in pillars. Our method can improve the performance of various NV-based devices. In the realm of magnetic sensing, we achieve a 3 × improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.