Scholarlink

<p>Quasi-2D tin-based perovskites are promising p-type semiconductors due to their thermodynamic stability and suppressed ion migration tendencies. However, the competitive growth of low- and high-dimensional phases leads to pronounced structural disorder, increased defect density, and poor crystallographic orientation, thereby restricting charge transport. Here, phenethylammonium thiocyanate (PEASCN) is incorporated into the precursor to promote the preferential formation of PEA<sub>2</sub>FA<sub><i>n</i>-1</sub>Sn<sub><i>n</i></sub>I<sub>3<i>n</i>-1</sub>SCN<sub>2</sub> (<i>n</i> = 2) templates. Substituting formamidinium iodide (FAI) with formamidinium formate (FAHCOO) and ammonium iodide (NH<sub>4</sub>I) suppresses the uncontrollable growth of 3D FASnI<sub>3</sub> at room temperature, enabling precise crystallization control. These low-dimensional templates guide the growth of high-dimensional phases upon annealing, yielding vertically oriented films with reduced defects. The fabricated field-effect transistors exhibit mobility up to 43 cm<sup>2 </sup>V<sup>−1</sup> s<sup>−1</sup> and an on/off ratio exceeding 10<sup>8</sup>, alongside nearly negligible hysteresis and enhanced stability. These results demonstrate a viable approach for regulating crystallization kinetics and realizing high-performance, stable tin-based perovskite devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Low-dimensional templates and delayed crystallization for high-quality tin-based perovskite films and high-performance transistors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年10月28日

查看全文
  • Yanqiu Wu,
  • Shuzhang Yang,
  • Enlong Li,
  • Yu Liu,
  • Feng Yuan,
  • Jincheng Wen,
  • Lina Hua,
  • Wunan Wang,
  • Yingguo Yang,
  • Yusheng Lei,
  • Junhao Chu,
  • Wenwu Li

摘要

Quasi-2D tin-based perovskites are promising p-type semiconductors due to their thermodynamic stability and suppressed ion migration tendencies. However, the competitive growth of low- and high-dimensional phases leads to pronounced structural disorder, increased defect density, and poor crystallographic orientation, thereby restricting charge transport. Here, phenethylammonium thiocyanate (PEASCN) is incorporated into the precursor to promote the preferential formation of PEA2FAn-1SnnI3n-1SCN2 (n = 2) templates. Substituting formamidinium iodide (FAI) with formamidinium formate (FAHCOO) and ammonium iodide (NH4I) suppresses the uncontrollable growth of 3D FASnI3 at room temperature, enabling precise crystallization control. These low-dimensional templates guide the growth of high-dimensional phases upon annealing, yielding vertically oriented films with reduced defects. The fabricated field-effect transistors exhibit mobility up to 43 cm2 V−1 s−1 and an on/off ratio exceeding 108, alongside nearly negligible hysteresis and enhanced stability. These results demonstrate a viable approach for regulating crystallization kinetics and realizing high-performance, stable tin-based perovskite devices.