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<p>The synergistic Cu<sup>0</sup>-Cu<sup>δ+</sup> sites are found as the active sites for NH<sub>3</sub> synthesis through nitrate electroreduction reaction, but still face significant challenges in stabilizing the Cu<sup>δ+</sup> due to its self-reduction. Here we propose an Ohmic contact interface engineering strategy by loading copper nano-islands on indium hydroxide nanocubes. Attributed to the lower work function of Cu than that of In(OH)<sub>3</sub> with n-type semiconductor nature, the electrons in Cu can transfer unimpededly to In(OH)<sub>3</sub> at the interface of Ohmic junction, triggering and stabilizing polarized Cu<sup>0</sup>-Cu<sup>δ+</sup> active sites. Cu@In(OH)<sub>3</sub> sustains both high NH<sub>3</sub> yield rate (4.28 mmol h<sup>−1</sup> mg<sub>cat.</sub><sup>−1</sup>) and Faradaic efficiency (97.35%) at −0.6 V vs. RHE, while maintaining stability for at least 120 h under an Ampere-level of 800 mA cm<sup>−2</sup>. Such Ohmic contact interface engineering approach allows for simultaneously constructing and stabilizing the Cu<sup>0</sup>-Cu<sup>δ+</sup> for the electrosynthesis of ammonia, as well as other value-added chemicals relying on above active sites.</p>

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Stabilizing Cu0-Cuδ+ sites via ohmic contact interface engineering for ampere-level nitrate electroreduction to ammonia

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月8日

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  • Zeyu Li,
  • Ming Zheng,
  • Chunshuang Yan,
  • Dongqi Yang,
  • Ruyu Yang,
  • Chu Zhang,
  • Hengjie Liu,
  • Pin Song,
  • Chenhui Yin,
  • Zeming Qi,
  • Daobin Liu,
  • Xin Zhou,
  • Li Song,
  • Chade Lv,
  • Guihua Yu

摘要

The synergistic Cu0-Cuδ+ sites are found as the active sites for NH3 synthesis through nitrate electroreduction reaction, but still face significant challenges in stabilizing the Cuδ+ due to its self-reduction. Here we propose an Ohmic contact interface engineering strategy by loading copper nano-islands on indium hydroxide nanocubes. Attributed to the lower work function of Cu than that of In(OH)3 with n-type semiconductor nature, the electrons in Cu can transfer unimpededly to In(OH)3 at the interface of Ohmic junction, triggering and stabilizing polarized Cu0-Cuδ+ active sites. Cu@In(OH)3 sustains both high NH3 yield rate (4.28 mmol h−1 mgcat.−1) and Faradaic efficiency (97.35%) at −0.6 V vs. RHE, while maintaining stability for at least 120 h under an Ampere-level of 800 mA cm−2. Such Ohmic contact interface engineering approach allows for simultaneously constructing and stabilizing the Cu0-Cuδ+ for the electrosynthesis of ammonia, as well as other value-added chemicals relying on above active sites.