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<p>Efficient data transfer between memory and photonic components is crucial for a wide range of applications. However, this necessity brings forth energy-efficient data movement challenges associated with the memory wall, underscoring the demand for a fast and low-energy electro-optic photonic memory solution. Here, we demonstrate a class of energy-efficient electro-optic devices, namely Pockels photonic memory, that combines low-field switchable ferroelectrics with lithium niobate’s Pockel’s effect. Among such devices, this article will describe in detail the integrated embodiment of a ferroelectric field-effect transistor with lithium niobate on insulator micro ring resonator. We achieve switchable and non-volatile multiple optical memory states (6 states per transistor) with ultra-low energy cost (femto Joule/state), while achieving robust 10 year data retention and read-write endurance exceeding 10<sup>7</sup> cycles. Furthermore, we demonstrate the possibility of linear memory state stacking. The Pockels photonic memory enables the scaling of reconfigurable photonic systems into the femto Joule/state energy efficiencies.</p>

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Ferroelectric-based Pockels photonic memory

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月19日

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  • Zefeng Xu,
  • Chun-Kuei Chen,
  • Hong-Lin Lin,
  • Maheswari Sivan,
  • Evgeny Zamburg,
  • James Yong-Meng Lee,
  • Suresh Venkatesan,
  • Aaron Danner,
  • Aaron Voon-Yew Thean

摘要

Efficient data transfer between memory and photonic components is crucial for a wide range of applications. However, this necessity brings forth energy-efficient data movement challenges associated with the memory wall, underscoring the demand for a fast and low-energy electro-optic photonic memory solution. Here, we demonstrate a class of energy-efficient electro-optic devices, namely Pockels photonic memory, that combines low-field switchable ferroelectrics with lithium niobate’s Pockel’s effect. Among such devices, this article will describe in detail the integrated embodiment of a ferroelectric field-effect transistor with lithium niobate on insulator micro ring resonator. We achieve switchable and non-volatile multiple optical memory states (6 states per transistor) with ultra-low energy cost (femto Joule/state), while achieving robust 10 year data retention and read-write endurance exceeding 107 cycles. Furthermore, we demonstrate the possibility of linear memory state stacking. The Pockels photonic memory enables the scaling of reconfigurable photonic systems into the femto Joule/state energy efficiencies.