Scholarlink

<p>The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga<sub>2</sub>O<sub>3</sub> on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application. This study presents van der Waals β-Ga<sub>2</sub>O<sub>3</sub> (VdW-β-Ga<sub>2</sub>O<sub>3</sub>) grown on high-thermal-conductivity polycrystalline diamond. VdW forces modify the coupling state between the single-crystal thin film and polycrystalline substrate. Tunable growth of (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41467_2025_63666_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="25" /> </InlineMediaObject> <EquationSource Format="TEX">\(\bar{2}01\)</EquationSource> <EquationSource Format="MATHML"><math> <mover accent="true"> <mrow> <mn>2</mn> </mrow> <mo>¯</mo> </mover> <mn>01</mn> </math></EquationSource> </InlineEquation>) VdW-β-Ga<sub>2</sub>O<sub>3</sub> is achieved by leveraging the mismatch between graphene and the oxygen surface densities of varying crystal orientations and their oxygen-partial-pressure dependence. The 350 nm thick, high-crystallinity films exhibit a smallest rocking curve FWHM value of 0.18° and a root mean square roughness of 6.71 nm. Graphene alleviated interfacial thermal expansion stress; β-Ga<sub>2</sub>O<sub>3</sub>/diamond interface exhibits an ultralow thermal boundary resistance of 2.82 m<sup>2</sup>·K/GW. Photodetectors exhibit a photo-to-dark current ratio of 10<sup>6</sup> and a responsivity of 210 A/W, confirming the strategy’s practicality and technological significance.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年8月31日

查看全文
  • Jing Ning,
  • Zhichun Yang,
  • Haidi Wu,
  • Xinmeng Dong,
  • Yaning Zhang,
  • Yufei Chen,
  • Xinbo Zhang,
  • Dong Wang,
  • Yue Hao,
  • Jincheng Zhang

摘要

The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application. This study presents van der Waals β-Ga2O3 (VdW-β-Ga2O3) grown on high-thermal-conductivity polycrystalline diamond. VdW forces modify the coupling state between the single-crystal thin film and polycrystalline substrate. Tunable growth of ( \(\bar{2}01\) 2 ¯ 01 ) VdW-β-Ga2O3 is achieved by leveraging the mismatch between graphene and the oxygen surface densities of varying crystal orientations and their oxygen-partial-pressure dependence. The 350 nm thick, high-crystallinity films exhibit a smallest rocking curve FWHM value of 0.18° and a root mean square roughness of 6.71 nm. Graphene alleviated interfacial thermal expansion stress; β-Ga2O3/diamond interface exhibits an ultralow thermal boundary resistance of 2.82 m2·K/GW. Photodetectors exhibit a photo-to-dark current ratio of 106 and a responsivity of 210 A/W, confirming the strategy’s practicality and technological significance.