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<p>Realization of tunable materials that are multifunctional and maintain high performance in dynamically changing environments is a fundamental goal of science and engineering. Tunable dielectrics form the basis of a wide variety of communication and sensing devices and require breakthrough performance improvement to enable next-generation technologies. Using phenomenological modeling, film growth, and characterization, we show that devices consisting of domain-wall-rich Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3</sub> films close to a polar-domain-variant phase boundary exhibit colossal dielectric tunability of 100:1 (99%) at a voltage (electric field) of ~15 V (750 kV/cm), resulting in a tunability-quality factor product figure of merit that rises to nearly 10<sup>5</sup>, two orders of magnitude higher than the best previous reported values. Remarkably, varying the amplitude of alternating-current bias enables modulation of this tunability by 50%, owing to domain-wall motion. These results suggest that domain engineering is a powerful approach for achieving excellent modulation of functional properties in ferroelectric films.</p>

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Colossal and tunable dielectric tunability in domain-engineered barium strontium titanate

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月26日

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  • Dongfang Chen,
  • Sergey Nisnevich,
  • Liyan Wu,
  • Zongquan Gu,
  • John Carroll,
  • Yizhe Jiang,
  • Cedric J. G. Meyers,
  • Kathleen Coleman,
  • Brendan M. Hanrahan,
  • Lane W. Martin,
  • Ilya Grinberg,
  • Jonathan E. Spanier

摘要

Realization of tunable materials that are multifunctional and maintain high performance in dynamically changing environments is a fundamental goal of science and engineering. Tunable dielectrics form the basis of a wide variety of communication and sensing devices and require breakthrough performance improvement to enable next-generation technologies. Using phenomenological modeling, film growth, and characterization, we show that devices consisting of domain-wall-rich Ba0.8Sr0.2TiO3 films close to a polar-domain-variant phase boundary exhibit colossal dielectric tunability of 100:1 (99%) at a voltage (electric field) of ~15 V (750 kV/cm), resulting in a tunability-quality factor product figure of merit that rises to nearly 105, two orders of magnitude higher than the best previous reported values. Remarkably, varying the amplitude of alternating-current bias enables modulation of this tunability by 50%, owing to domain-wall motion. These results suggest that domain engineering is a powerful approach for achieving excellent modulation of functional properties in ferroelectric films.