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<p>Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional complementary metal-oxide-semiconductor technology by reducing the number of components needed to construct functional circuits. Prior work required continuous voltage application to programming gate terminal(s) alongside the primary gate, undermining the advantages of reconfigurable devices in achieving compact and power-efficient integrated circuits. Here, we realize scalable reconfigurable devices based on single-gate field-effect transistors that integrate highly aligned single-walled carbon nanotube channels with a ferroelectric aluminum scandium nitride gate dielectric. The devices exhibit ambipolar characteristics with high, well-balanced on-state currents (~270 μA μm<sup>−1</sup> at a drain voltage of 3 V) and on/off ratios exceeding 10<sup>5</sup>, along with large memory windows and excellent retention behavior. Ferroelectric polarization switching also enables reconfiguration between <i>p</i>- and <i>n</i>-channel transistors, allowing ternary content-addressable memory to be realized with far fewer devices than circuits based on conventional silicon technology or alternative memory devices.</p>

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Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年8月17日

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  • Dongjoon Rhee,
  • Kwan-Ho Kim,
  • Jeffrey Zheng,
  • Seunguk Song,
  • Lian-Mao Peng,
  • Roy H. Olsson III,
  • Joohoon Kang,
  • Deep Jariwala

摘要

Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional complementary metal-oxide-semiconductor technology by reducing the number of components needed to construct functional circuits. Prior work required continuous voltage application to programming gate terminal(s) alongside the primary gate, undermining the advantages of reconfigurable devices in achieving compact and power-efficient integrated circuits. Here, we realize scalable reconfigurable devices based on single-gate field-effect transistors that integrate highly aligned single-walled carbon nanotube channels with a ferroelectric aluminum scandium nitride gate dielectric. The devices exhibit ambipolar characteristics with high, well-balanced on-state currents (~270 μA μm−1 at a drain voltage of 3 V) and on/off ratios exceeding 105, along with large memory windows and excellent retention behavior. Ferroelectric polarization switching also enables reconfiguration between p- and n-channel transistors, allowing ternary content-addressable memory to be realized with far fewer devices than circuits based on conventional silicon technology or alternative memory devices.