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<p>Van der Waals multiferroic structures hold promises for advancing the development of low-power multifunctional nanoelectronics devices, but single-phase two-dimensional multiferroic materials are limited. In this study, we constructed a room-temperature P(VDF-TrFE)/Fe<sub>3</sub>GaTe<sub>2</sub> heterostructure (ferromagnetic layer thickness of 4.8 nm). and demonstrate significant bidirectional modulation of the Curie temperature upon application of ±90 V. Specifically, the Curie temperature decreased from 326 K to 247 K under +90 V and increased to 366 K under −90 V. Notably, we observed layer-dependent magnetic modulation, In 3-layer Fe<sub>3</sub>GaTe<sub>2</sub>, transitioning from negative to positive polarization increases Curie temperature, while thicker configurations show a decrease. This phenomenon originates from the competition between interlayer/intralayer magnetic exchange coupling driven by the electric field (density functional theory calculations), supporting non-volatile switching of the magnetization state, which is suitable for high-precision neural network computing. This discovery provides an innovative approach for developing low-power multifunctional nanoelectronics devices using two-dimensional magnetoelectric coupling structures.</p>

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Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月23日

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  • Chuanyang Cai,
  • Yao Wen,
  • Lei Yin,
  • Ruiqing Cheng,
  • Hao Wang,
  • Xiaoqiang Feng,
  • Liang Liu,
  • Chao Jiang,
  • Jun He

摘要

Van der Waals multiferroic structures hold promises for advancing the development of low-power multifunctional nanoelectronics devices, but single-phase two-dimensional multiferroic materials are limited. In this study, we constructed a room-temperature P(VDF-TrFE)/Fe3GaTe2 heterostructure (ferromagnetic layer thickness of 4.8 nm). and demonstrate significant bidirectional modulation of the Curie temperature upon application of ±90 V. Specifically, the Curie temperature decreased from 326 K to 247 K under +90 V and increased to 366 K under −90 V. Notably, we observed layer-dependent magnetic modulation, In 3-layer Fe3GaTe2, transitioning from negative to positive polarization increases Curie temperature, while thicker configurations show a decrease. This phenomenon originates from the competition between interlayer/intralayer magnetic exchange coupling driven by the electric field (density functional theory calculations), supporting non-volatile switching of the magnetization state, which is suitable for high-precision neural network computing. This discovery provides an innovative approach for developing low-power multifunctional nanoelectronics devices using two-dimensional magnetoelectric coupling structures.