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<p>Ultrafast laser three-dimensional writing has made breakthroughs in manufacturing technologies. However, it remains rarely adopted for semiconductor technologies due to in-chip propagation nonlinearities causing a lack of controllability for intense infrared light. To solve this problem, plasma-optics concepts are promising since ultrashort laser pulses, even if inappropriate for direct writing, can readily inject high-density free-carriers inside semiconductors. To achieve highly localized and reliable processing, we create plasma seeds with tightly focused pre-ionizing femtosecond pulses. We show how critical density conditions can be used for extremely confined energy deposition with a synchronized writing irradiation and create ~ 1-µm-sized isotropic modifications inside silicon. Drastic improvement is also found on the material change controllability leading to unique demonstrations including rewritable optical memories (&gt;100 writing/erasure cycles) and graded-index functionalities. By solving its controllability issues with critical plasma seeds, we show the potential of ultrafast laser writing for flexible fabrication of reconfigurable monolithic silicon-based optical devices.</p>

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In-chip critical plasma seeds for laser writing of reconfigurable silicon photonics systems

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月22日

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  • Andong Wang,
  • Amlan Das,
  • Vladimir Yu Fedorov,
  • Pol Sopeña,
  • Stelios Tzortzakis,
  • David Grojo

摘要

Ultrafast laser three-dimensional writing has made breakthroughs in manufacturing technologies. However, it remains rarely adopted for semiconductor technologies due to in-chip propagation nonlinearities causing a lack of controllability for intense infrared light. To solve this problem, plasma-optics concepts are promising since ultrashort laser pulses, even if inappropriate for direct writing, can readily inject high-density free-carriers inside semiconductors. To achieve highly localized and reliable processing, we create plasma seeds with tightly focused pre-ionizing femtosecond pulses. We show how critical density conditions can be used for extremely confined energy deposition with a synchronized writing irradiation and create ~ 1-µm-sized isotropic modifications inside silicon. Drastic improvement is also found on the material change controllability leading to unique demonstrations including rewritable optical memories (>100 writing/erasure cycles) and graded-index functionalities. By solving its controllability issues with critical plasma seeds, we show the potential of ultrafast laser writing for flexible fabrication of reconfigurable monolithic silicon-based optical devices.