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<p>Highly efficient, ultrahigh-density inorganic micro-LED displays are gaining a strong position in the market for use in augmented reality glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the micro-LED displays evolve into next generation augmented reality viewers. Here, we report 1-nm-thick epitaxial AlN passivation for 1.5-μm-diameter InGaN red micro-LEDs with high external quantum efficiency of 6.5% at the peak wavelength of 649 nm. The flexible form factor of the red micro-LEDs is achieved through the development of a near-complete device transfer. By overcoming the existing bottlenecks of red spectral efficiency and form factor of inorganic micro-LEDs, we believe this will pave the way for another revolution in the augmented reality and metaverse industries.</p>

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1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月1日

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  • Kiho Kong,
  • Jun Hee Choi,
  • Joo Hun Han,
  • Eunsung Lee,
  • Jinjoo Park,
  • Nakhyun Kim,
  • Jaewoo Lee,
  • Chanyoung Shin,
  • Jung Hun Park,
  • Dong-Chul Shin,
  • Joosung Kim,
  • Sunil Kim,
  • Tae-Gon Kim,
  • Seokho Yun,
  • Miyoung Kim

摘要

Highly efficient, ultrahigh-density inorganic micro-LED displays are gaining a strong position in the market for use in augmented reality glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the micro-LED displays evolve into next generation augmented reality viewers. Here, we report 1-nm-thick epitaxial AlN passivation for 1.5-μm-diameter InGaN red micro-LEDs with high external quantum efficiency of 6.5% at the peak wavelength of 649 nm. The flexible form factor of the red micro-LEDs is achieved through the development of a near-complete device transfer. By overcoming the existing bottlenecks of red spectral efficiency and form factor of inorganic micro-LEDs, we believe this will pave the way for another revolution in the augmented reality and metaverse industries.