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<p>Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method for high-fidelity single-spin control in silicon, although so far experiments have been restricted to one-dimensional arrays. In contrast, qubit control based on hopping spins has recently emerged as a compelling alternative, with high-fidelity baseband control realized in sparse two-dimensional hole arrays in germanium. In this work, we commission a <sup>28</sup>Si/SiGe 2 × 2 quantum dot array both as a four-qubit device using EDSR and as a two-qubit device using baseband hopping control. We establish a lower bound on the fidelity of the hopping gate of 99.50(6)%, which is similar to the average fidelity of the resonant gate. The hopping gate also circumvents the transient pulse-induced resonance shift from heating observed during EDSR operation. To motivate hopping spins as an attractive means of scaling silicon spin-qubit arrays, we propose an extensible nanomagnet design that enables engineered baseband control of large spin arrays.</p>

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Baseband control of single-electron silicon spin qubits in two dimensions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月1日

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  • Florian K. Unseld,
  • Brennan Undseth,
  • Eline Raymenants,
  • Yuta Matsumoto,
  • Sander L. de Snoo,
  • Saurabh Karwal,
  • Oriol Pietx-Casas,
  • Alexander S. Ivlev,
  • Marcel Meyer,
  • Amir Sammak,
  • Menno Veldhorst,
  • Giordano Scappucci,
  • Lieven M. K. Vandersypen

摘要

Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method for high-fidelity single-spin control in silicon, although so far experiments have been restricted to one-dimensional arrays. In contrast, qubit control based on hopping spins has recently emerged as a compelling alternative, with high-fidelity baseband control realized in sparse two-dimensional hole arrays in germanium. In this work, we commission a 28Si/SiGe 2 × 2 quantum dot array both as a four-qubit device using EDSR and as a two-qubit device using baseband hopping control. We establish a lower bound on the fidelity of the hopping gate of 99.50(6)%, which is similar to the average fidelity of the resonant gate. The hopping gate also circumvents the transient pulse-induced resonance shift from heating observed during EDSR operation. To motivate hopping spins as an attractive means of scaling silicon spin-qubit arrays, we propose an extensible nanomagnet design that enables engineered baseband control of large spin arrays.