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<p>Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has remained challenging, hindering the development of fully integrated 2D complementary metal-oxide-semiconductor (CMOS) technology. Here, we present p-type 2D FETs based on bilayer WSe<sub>2</sub> synthesized via an industry-compatible metal-organic chemical vapor deposition (MOCVD) process. These devices achieve on-state current as high as 421 μA/μm at a drain voltage of 1 V and a gate overdrive voltage of 2.5 V, an on/off current ratio exceeding 10<sup>7</sup>, and a subthreshold swing as low as 75 mV/decade. Key device parameters include a contact resistance down to 1.3 kΩ-µm, a field-effect hole mobility of 16.1 cm<sup>2</sup>V<sup>-1</sup>s<sup>−1</sup>, and a peak transconductance of 250 µS/µm. This high performance is enabled by p-type doping through nitric oxide (NO) treatment at 100 °C for 30 minutes. Furthermore, we scaled the channel length down to 50 nm, integrated a high-κ gate dielectric with an equivalent oxide thickness of ~2.3 nm, and analyzed over 300 devices. We also investigated the temporal and thermal stability of p-type doping, providing insights into the underlying NO doping mechanism. Our findings help to address a long-standing challenge in 2D materials research and offer a promising solution to realize high-performance p-type 2D FETs for future CMOS applications.</p>

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High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月1日

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  • Subir Ghosh,
  • Muhtasim Ul Karim Sadaf,
  • Andrew R. Graves,
  • Yikai Zheng,
  • Andrew Pannone,
  • Samriddha Ray,
  • Chung-Yu Cheng,
  • Jeremy Guevara,
  • Joan M. Redwing,
  • Saptarshi Das

摘要

Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has remained challenging, hindering the development of fully integrated 2D complementary metal-oxide-semiconductor (CMOS) technology. Here, we present p-type 2D FETs based on bilayer WSe2 synthesized via an industry-compatible metal-organic chemical vapor deposition (MOCVD) process. These devices achieve on-state current as high as 421 μA/μm at a drain voltage of 1 V and a gate overdrive voltage of 2.5 V, an on/off current ratio exceeding 107, and a subthreshold swing as low as 75 mV/decade. Key device parameters include a contact resistance down to 1.3 kΩ-µm, a field-effect hole mobility of 16.1 cm2V-1s−1, and a peak transconductance of 250 µS/µm. This high performance is enabled by p-type doping through nitric oxide (NO) treatment at 100 °C for 30 minutes. Furthermore, we scaled the channel length down to 50 nm, integrated a high-κ gate dielectric with an equivalent oxide thickness of ~2.3 nm, and analyzed over 300 devices. We also investigated the temporal and thermal stability of p-type doping, providing insights into the underlying NO doping mechanism. Our findings help to address a long-standing challenge in 2D materials research and offer a promising solution to realize high-performance p-type 2D FETs for future CMOS applications.