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<p>Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic applications. Here, we report a strategy to achieve inversion symmetry breaking from a centrosymmetric transition metal dichalcogenide (TMDC) bilayer PtTe<sub>2</sub>, leading to a giant Rashba spin splitting. Specifically, the thermal annealing turns one layer of PtTe<sub>2</sub> sample into a transition metal monochalcogenide (TMMC) PtTe through Te extraction, thus forming PtTe/PtTe<sub>2</sub> heterostructure with inversion symmetry breaking. In this naturally-formed PtTe/PtTe<sub>2</sub> heterostructure, we observe a giant Rashba spin splitting with Rashba coefficient of <Emphasis Type="BoldItalic">α</Emphasis><sub><Emphasis Type="BoldItalic">R</Emphasis></sub> = 1.8 eV&#xa0;⋅&#xa0;Å, as revealed by spin- and angle-resolved photoemission spectroscopy measurements. Our work demonstrates a convenient and effective pathway for achieving pronounced Rashba splitting in centrosymmetric TMDC thin films by creating TMMC/TMDC heterostructure, thereby extending their potential applications to spintronics.</p>

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Giant Rashba splitting in PtTe/PtTe2 heterostructure

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月18日

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  • Runfa Feng,
  • Yang Zhang,
  • Jiaheng Li,
  • Qian Li,
  • Changhua Bao,
  • Hongyun Zhang,
  • Wanying Chen,
  • Xiao Tang,
  • Ken Yaegashi,
  • Katsuaki Sugawara,
  • Takafumi Sato,
  • Wenhui Duan,
  • Pu Yu,
  • Shuyun Zhou

摘要

Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic applications. Here, we report a strategy to achieve inversion symmetry breaking from a centrosymmetric transition metal dichalcogenide (TMDC) bilayer PtTe2, leading to a giant Rashba spin splitting. Specifically, the thermal annealing turns one layer of PtTe2 sample into a transition metal monochalcogenide (TMMC) PtTe through Te extraction, thus forming PtTe/PtTe2 heterostructure with inversion symmetry breaking. In this naturally-formed PtTe/PtTe2 heterostructure, we observe a giant Rashba spin splitting with Rashba coefficient of αR = 1.8 eV ⋅ Å, as revealed by spin- and angle-resolved photoemission spectroscopy measurements. Our work demonstrates a convenient and effective pathway for achieving pronounced Rashba splitting in centrosymmetric TMDC thin films by creating TMMC/TMDC heterostructure, thereby extending their potential applications to spintronics.