<p>SnSe crystal has witnessed significant advancements as a promising thermoelectric material over the past decade. Its in-plane direction shows robust mechanical strength for practical thermoelectric applications. Herein, we optimize the in-plane thermoelectric performance of <i>n</i>-type SnSe by crystal symmetry modification. In particular, we find that Te and Mo alloying continuously enhances the crystal symmetry, thereby increasing the carrier mobility to ~ 422 cm<sup>2 </sup>V<sup>−1</sup> s<sup>−1</sup>. Simultaneously, the conduction bands converge with the symmetry modification, further improving the electrical transport. Additionally, the lattice thermal conductivity is limited to ~ 1.1 W m<sup>−1</sup> K<sup>−1</sup> due to the softness of both acoustic and optical branches. Consequently, we achieve a power factor of ~ 28 μW cm<sup>−1</sup> K<sup>−2</sup> and <i>ZT</i> of ~ 0.6 in <i>n</i>-type SnSe at 300 K. The average <i>ZT</i> reaches ~ 0.89 at 300−723 K. The single-leg device based on the obtained <i>n</i>-type SnSe shows a remarkable efficiency of ~ 5.3% under the Δ<i>T</i> of ~ 300 K, which is the highest reported in <i>n</i>-type SnSe. This work demonstrates the substantial potential of SnSe for practical applications of power generation and waste heat recovery.</p>

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Crystal symmetry modification enables high-ranged in-plane thermoelectric performance in n-type SnSe crystals

  • Haonan Shi,
  • Yi Wen,
  • Shulin Bai,
  • Cheng Chang,
  • Lizhong Su,
  • Tian Gao,
  • Shibo Liu,
  • Dongrui Liu,
  • Bingchao Qin,
  • Yongxin Qin,
  • Huiqiang Liang,
  • Xin Qian,
  • Zhenghao Hou,
  • Xiang Gao,
  • Tianhang Zhou,
  • Qing Tan,
  • Li-Dong Zhao

摘要

SnSe crystal has witnessed significant advancements as a promising thermoelectric material over the past decade. Its in-plane direction shows robust mechanical strength for practical thermoelectric applications. Herein, we optimize the in-plane thermoelectric performance of n-type SnSe by crystal symmetry modification. In particular, we find that Te and Mo alloying continuously enhances the crystal symmetry, thereby increasing the carrier mobility to ~ 422 cm2 V−1 s−1. Simultaneously, the conduction bands converge with the symmetry modification, further improving the electrical transport. Additionally, the lattice thermal conductivity is limited to ~ 1.1 W m−1 K−1 due to the softness of both acoustic and optical branches. Consequently, we achieve a power factor of ~ 28 μW cm−1 K−2 and ZT of ~ 0.6 in n-type SnSe at 300 K. The average ZT reaches ~ 0.89 at 300−723 K. The single-leg device based on the obtained n-type SnSe shows a remarkable efficiency of ~ 5.3% under the ΔT of ~ 300 K, which is the highest reported in n-type SnSe. This work demonstrates the substantial potential of SnSe for practical applications of power generation and waste heat recovery.