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<p>The further success of OLED beyond conventional low-luminance display applications has been hampered by the low power efficiency (PE) at high luminance. Here, we demonstrate the strategic implementation of an exceptionally high-PE, high-luminance OLED using a phosphor-assisted thermally-activated-delayed-fluorescence (TADF)-sensitized narrowband emission. On the basis of a TADF sensitizing-host possessing a fast reverse intersystem crossing, an anti-aggregation-caused-quenching character and a good bipolar charge-transporting ability, this design achieves not only a 100% exciton radiative consumption with decay times mainly in the sub-microsecond regime to mitigate exciton annihilations for nearly roll-off-free external quantum efficiency, but also narrowband emission with both small energetic loss during energy transfer and resistive loss with increasing luminance. Consequently, besides a maximum PE of 187.7 lm/W, an exceptionally high critical maximum luminance (where a PE of 100 lm/W is maintained) of over 110,000 cd/m<sup>2</sup> is achieved for the proof-of-the-concept device, nearly one-of-magnitude higher than the previous record.</p>

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Ultra-low power-consumption OLEDs via phosphor-assisted thermally-activated-delayed-fluorescence-sensitized narrowband emission

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月2日

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  • Chen Yin,
  • Yangyang Xin,
  • Tianyu Huang,
  • Qisheng Zhang,
  • Lian Duan,
  • Dongdong Zhang

摘要

The further success of OLED beyond conventional low-luminance display applications has been hampered by the low power efficiency (PE) at high luminance. Here, we demonstrate the strategic implementation of an exceptionally high-PE, high-luminance OLED using a phosphor-assisted thermally-activated-delayed-fluorescence (TADF)-sensitized narrowband emission. On the basis of a TADF sensitizing-host possessing a fast reverse intersystem crossing, an anti-aggregation-caused-quenching character and a good bipolar charge-transporting ability, this design achieves not only a 100% exciton radiative consumption with decay times mainly in the sub-microsecond regime to mitigate exciton annihilations for nearly roll-off-free external quantum efficiency, but also narrowband emission with both small energetic loss during energy transfer and resistive loss with increasing luminance. Consequently, besides a maximum PE of 187.7 lm/W, an exceptionally high critical maximum luminance (where a PE of 100 lm/W is maintained) of over 110,000 cd/m2 is achieved for the proof-of-the-concept device, nearly one-of-magnitude higher than the previous record.