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<p>Wafer-scale and low-voltage operation are essential for practical artificial vision hardware. Here, we report a wafer-scale platform for artificial synapse and logic gate circuits with a yield exceeding 91%, utilizing coplanar self-aligned-gate (SAG) organic transistors that combine the narrow-bandgap semiconducting polymer DPP-DTT with a self-assembled monolayer dielectric. Coplanar SAG electrodes effectively suppress parasitic effects due to the reduction of gate-to-contact overlaps, enabling uniform transistor operation at low voltages (-6 to 2 V) across the wafer, delivering a high rectification ratio of 2.46 × 10<sup>5</sup>. Under near-infrared illumination, the devices exhibit efficient phototransduction and reconfigurable modulation of synaptic plasticity between excitatory and inhibitory modes, with an ultra-low energy consumption of 5.28 fJ per event. In addition, minimal circuit configurations enable electrically driven NOT and NOR logic gates circuits as well as optical-electrical hybrid-input NOR logic operations, enabling maximize and simplifying the functionality of photosensing logic circuits. Furthermore, an artificial neural network constructed based on the SAG transistors further demonstrate the potential applications in handwritten digit recognition with a recognition accuracy of ~96% and image memory behavior. This work provides a scalable and effective path for developing low-power artificial synapses to neuromorphic artificial vision systems.</p><p></p>

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Wafer-scalable artificial synapses and logic gate circuits based on coplanar self-aligned-gate organic transistors for artificial vision applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月27日

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  • Qi Yuan,
  • Sihai Luo,
  • Zechen Liang,
  • Lijuan Chen,
  • Hao Sun,
  • Hongyi Shen,
  • Yingfang Zhang,
  • Xiaoliang Chen,
  • Jian Lv,
  • Bai Sun,
  • Yi Lv,
  • Guanghao Lu,
  • Fenggang Ren,
  • Jinyou Shao

摘要

Wafer-scale and low-voltage operation are essential for practical artificial vision hardware. Here, we report a wafer-scale platform for artificial synapse and logic gate circuits with a yield exceeding 91%, utilizing coplanar self-aligned-gate (SAG) organic transistors that combine the narrow-bandgap semiconducting polymer DPP-DTT with a self-assembled monolayer dielectric. Coplanar SAG electrodes effectively suppress parasitic effects due to the reduction of gate-to-contact overlaps, enabling uniform transistor operation at low voltages (-6 to 2 V) across the wafer, delivering a high rectification ratio of 2.46 × 105. Under near-infrared illumination, the devices exhibit efficient phototransduction and reconfigurable modulation of synaptic plasticity between excitatory and inhibitory modes, with an ultra-low energy consumption of 5.28 fJ per event. In addition, minimal circuit configurations enable electrically driven NOT and NOR logic gates circuits as well as optical-electrical hybrid-input NOR logic operations, enabling maximize and simplifying the functionality of photosensing logic circuits. Furthermore, an artificial neural network constructed based on the SAG transistors further demonstrate the potential applications in handwritten digit recognition with a recognition accuracy of ~96% and image memory behavior. This work provides a scalable and effective path for developing low-power artificial synapses to neuromorphic artificial vision systems.