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<p>Infrared (IR) gas sensors have an urgent demand for high-reliability MEMS IR emitters. In this study, a wafer-level self-packaged MEMS IR emitter (SPIRE) has been designed and manufactured to enhance the durability of devices in high temperatures and ambient air. In the state-of-the-art design, Pt-wire heating and temperature sensing elements were fabricated onto a silicon (Si) membrane and vacuum-sealed within a glass cavity utilizing the Si-glass anodic bonding technique. Additionally, a black-Si nanostructure was prepared on the opposite side of the Si membrane to enhance IR light emissivity. The electrical-thermal-mechanical properties were simulated using COMSOL Multiphysics to optimize the structural design. The devices were fabricated through wafer-level MEMS processing techniques. Testing results demonstrated that the SPIREs were capable of achieving a light-emitting power intensity of 172 mW/Sr/µm at a peak wavelength of 6.1 µm and a 3-dB bandwidth of 52 Hz, corresponding to a surface temperature of 400 °C at a driving power of 850 mW. Long-term reliability was assessed through an accelerated aging test and a life prediction method. The estimated lifespan of the SPIREs can reach 10 years at a working temperature of 500 °C.</p><p></p>

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Wafer-level self-packaged MEMS infrared emitters with high-emissivity black silicon surface

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月12日

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  • Zhiwei Li,
  • Hongliang Zu,
  • Hongyu Chen,
  • Minghao Liu,
  • Haisheng San,
  • Daquan Yu

摘要

Infrared (IR) gas sensors have an urgent demand for high-reliability MEMS IR emitters. In this study, a wafer-level self-packaged MEMS IR emitter (SPIRE) has been designed and manufactured to enhance the durability of devices in high temperatures and ambient air. In the state-of-the-art design, Pt-wire heating and temperature sensing elements were fabricated onto a silicon (Si) membrane and vacuum-sealed within a glass cavity utilizing the Si-glass anodic bonding technique. Additionally, a black-Si nanostructure was prepared on the opposite side of the Si membrane to enhance IR light emissivity. The electrical-thermal-mechanical properties were simulated using COMSOL Multiphysics to optimize the structural design. The devices were fabricated through wafer-level MEMS processing techniques. Testing results demonstrated that the SPIREs were capable of achieving a light-emitting power intensity of 172 mW/Sr/µm at a peak wavelength of 6.1 µm and a 3-dB bandwidth of 52 Hz, corresponding to a surface temperature of 400 °C at a driving power of 850 mW. Long-term reliability was assessed through an accelerated aging test and a life prediction method. The estimated lifespan of the SPIREs can reach 10 years at a working temperature of 500 °C.