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<p>While light scattering is widely utilized in optical metrology and measurement, it has long been regarded as detrimental in laser-material processing. Here, we report an interferometric scattering effect that overturns this conventional view by resolving the six-decade challenge of axial resolution in optical manufacturing. This breakthrough elevates the axial resolution from micrometers, e.g., ~2 µm in transparent solids slicing, to the sub-10 nm level. The underlying mechanism involves the controlled sequential generation of nano-scatterers through interference between the incident laser and deliberately seeded scattering centers. Based on this phenomenon, we developed an interferometric scattering-based optical tomoslicing technology (<i>i</i>-SOT), achieving kerf widths as narrow as 7 nm under an industrial standard efficiency of up to 400 mm²/s. This unprecedented axial resolution enables nearly lossless laser wafering from ingots—reducing mass loss from ~30% to below 1% — with transformative potential for manufacturing laser crystals, photovoltaics, and microelectronic chips.</p>

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Interferometric scattering for optical tomoslicing of transparent solids

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年6月30日

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  • Yuan Chai,
  • Hong-Hua Fang,
  • Zhen-Ze Li,
  • Tian-Wei Wang,
  • Shao-Feng Liu,
  • Hong-Ren Chen,
  • Shu-Chang Li,
  • Xiao-Yan Li,
  • Jia-Ming Lyu,
  • Hong-Bo Sun

摘要

While light scattering is widely utilized in optical metrology and measurement, it has long been regarded as detrimental in laser-material processing. Here, we report an interferometric scattering effect that overturns this conventional view by resolving the six-decade challenge of axial resolution in optical manufacturing. This breakthrough elevates the axial resolution from micrometers, e.g., ~2 µm in transparent solids slicing, to the sub-10 nm level. The underlying mechanism involves the controlled sequential generation of nano-scatterers through interference between the incident laser and deliberately seeded scattering centers. Based on this phenomenon, we developed an interferometric scattering-based optical tomoslicing technology (i-SOT), achieving kerf widths as narrow as 7 nm under an industrial standard efficiency of up to 400 mm²/s. This unprecedented axial resolution enables nearly lossless laser wafering from ingots—reducing mass loss from ~30% to below 1% — with transformative potential for manufacturing laser crystals, photovoltaics, and microelectronic chips.