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<p>The fast crystallization and facile oxidation of Sn<sup>2+</sup> of tin-lead (Sn-Pb) perovskites are the biggest challenges for their applications in high-performance near-infrared (NIR) photodetectors and imagers. Here, we introduce a multifunctional diphenyl sulfoxide (DPSO) molecule into perovskite precursor ink to response these issues by revealing its strong binding interactions with the precursor species. The regulated perovskite film exhibits a dense morphology, reduced defect density and prolonged carrier diffusion length. The manufactured self-powered photodetector realizes a spectral response of 300-1100 nm, dark current density of 4.7 × 10<sup>−8</sup> mA cm<sup>−2</sup>, peak responsivity of 0.49 A W<sup>−1</sup> and specific detectivity of 1.20 × 10<sup>12</sup> Jones in NIR region (780–1100 nm), –3 dB bandwidth of 11.4 MHz, linear dynamic range of 174 dB, and ultrafast rise/fall time of 14.2/17.1 ns, respectively. We demonstrate a 64 × 64 NIR imager with an impressive spatial resolution of 1.32 lp mm<sup>−1</sup> by monolithically integrating the photodetector with a commercial thin-film transistor readout circuit.</p>

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A monolithically integrated near-infrared imager with crystallization- and oxidation-modulated tin-lead perovskites

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月4日

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  • Zhichun Yang,
  • Jingjing Liu,
  • Haotian Bao,
  • Zonghao Liu,
  • Zaiwei Wang,
  • Xiangdong Li,
  • Zhihao Chen,
  • Guofeng Zhang,
  • Ruiyun Chen,
  • Jianyong Hu,
  • Shuangping Han,
  • Wei Chen,
  • Chengbing Qin,
  • Liantuan Xiao,
  • Suotang Jia

摘要

The fast crystallization and facile oxidation of Sn2+ of tin-lead (Sn-Pb) perovskites are the biggest challenges for their applications in high-performance near-infrared (NIR) photodetectors and imagers. Here, we introduce a multifunctional diphenyl sulfoxide (DPSO) molecule into perovskite precursor ink to response these issues by revealing its strong binding interactions with the precursor species. The regulated perovskite film exhibits a dense morphology, reduced defect density and prolonged carrier diffusion length. The manufactured self-powered photodetector realizes a spectral response of 300-1100 nm, dark current density of 4.7 × 10−8 mA cm−2, peak responsivity of 0.49 A W−1 and specific detectivity of 1.20 × 1012 Jones in NIR region (780–1100 nm), –3 dB bandwidth of 11.4 MHz, linear dynamic range of 174 dB, and ultrafast rise/fall time of 14.2/17.1 ns, respectively. We demonstrate a 64 × 64 NIR imager with an impressive spatial resolution of 1.32 lp mm−1 by monolithically integrating the photodetector with a commercial thin-film transistor readout circuit.