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<p>Quasi-two-dimensional (quasi-2D) metal halide perovskite (MHP) ferroelectrics, characterized by spontaneous polarization and semiconducting properties, hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing. However, typical quasi-2D perovskite films contain multiple quantum wells with random width distribution, which degrade optoelectronic properties and spontaneous polarization. Here, we introduce phase-pure quantum wells with uniform well width by incorporating the inorganic salt MnBr<sub>2</sub>, which effectively controls crystallization kinetics and restricts the nucleation of high n-phases, producing high-quality films. The resulting (BA)<sub>2</sub>CsPb<sub>2</sub>Br<sub>7</sub> (BA = C<sub>4</sub>H<sub>9</sub>NH<sub>3</sub>) film demonstrates ferroelectric hysteresis behavior, clear in-plane ferroelectric domain switching, and a high photoluminescence quantum efficiency (PLQE) of 88.7%. Significantly, we observed a nonvolatile, reversible in situ photoluminescence (PL) modulation of Mn<sup>2+</sup> in this ferroelectric MHP film under an applied electric field, attributed to lattice distortion from ferroelectric polarization orientation. These findings enabled the development of a simple system comprising gallium nitride (GaN) light emitting diodes (LEDs) and ferroelectric films to implement multi-state signal encoding and a logic AND gate. This work advances the fabrication of efficient ferroelectric MHP films and highlights their potential for advanced optoelectronic applications.</p>

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Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月30日

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  • Rui Sun,
  • Yuping Jia,
  • Bo Lai,
  • Zhiming Shi,
  • Mingrui Liu,
  • Weili Yu,
  • Ke Jiang,
  • Shanli Zhang,
  • Shunpeng Lv,
  • Yang Chen,
  • Xiaojuan Sun,
  • Dabing Li

摘要

Quasi-two-dimensional (quasi-2D) metal halide perovskite (MHP) ferroelectrics, characterized by spontaneous polarization and semiconducting properties, hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing. However, typical quasi-2D perovskite films contain multiple quantum wells with random width distribution, which degrade optoelectronic properties and spontaneous polarization. Here, we introduce phase-pure quantum wells with uniform well width by incorporating the inorganic salt MnBr2, which effectively controls crystallization kinetics and restricts the nucleation of high n-phases, producing high-quality films. The resulting (BA)2CsPb2Br7 (BA = C4H9NH3) film demonstrates ferroelectric hysteresis behavior, clear in-plane ferroelectric domain switching, and a high photoluminescence quantum efficiency (PLQE) of 88.7%. Significantly, we observed a nonvolatile, reversible in situ photoluminescence (PL) modulation of Mn2+ in this ferroelectric MHP film under an applied electric field, attributed to lattice distortion from ferroelectric polarization orientation. These findings enabled the development of a simple system comprising gallium nitride (GaN) light emitting diodes (LEDs) and ferroelectric films to implement multi-state signal encoding and a logic AND gate. This work advances the fabrication of efficient ferroelectric MHP films and highlights their potential for advanced optoelectronic applications.