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<p>Two novel metallogels, designated as Cd-AIA and Hg-AIA, were synthesized at ambient temperature utilizing 5-aminoisophthalic acid (AIA) as the gelator, along with cadmium(II) acetate and mercury(II) acetate in N,N-dimethylformamide. Rheological tests validated the mechanical robustness of the Cd(II)- and Hg(II)-based metallogels under various conditions. Characterization techniques, including EDX mapping and FESEM imaging, were employed to explore the chemical composition and microstructural details of these gels. The formation mechanisms of the metallogels were elucidated through FT-IR and Raman spectroscopy. PXRD was used to confirm the crystalline nature of the synthesized gels. TGA of Cd-AIA and Hg-AIA metallogels analyse the thermal stability of the metallogels upto 250 ºC. The optical band gaps were determined from the absorption spectra, indicating a strong semiconducting behavior. The semiconducting properties were further confirmed by electronic device characterization and charge carrier mobility assessments. Notably, the electron mobility observed in these metallogels is exceptionally high, potentially setting a new benchmark compared to previously reported values. A significant difference in conductivity was found between the two gels, with the Hg-AIA metallogel displaying superior semiconducting properties. Moreover, when tested under the same device configuration, the Hg-AIA diode exhibited better switching performance, a higher on–off ratio, and lower series resistance than the Cd-AIA diode. The I-V characteristics revealed a broad non-linear behavior, with the Cd-AIA diode showing greater non-linearity, likely due to its higher series resistance compared to the Hg-AIA diode. </p> Graphical Abstract <p></p>

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Development of two semiconducting supramolecular metallogels of Cd(II)- and Hg(II)-ions from 5-aminoisophthalic acid gelator for high-performance Schottky diodes and advanced microelectronic applications

  • 期刊论文

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  • 发表日期：

    2025年5月12日

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  • Subhendu Dhibar,
  • Aiswarya Mohan,
  • Sangita Some,
  • Kripasindhu Karmakar,
  • Saranya Babu,
  • Subham Bhattacharjee,
  • Soumya Jyoti Ray,
  • Lebea N. Nthunya,
  • Timothy O. Ajiboye,
  • Padmanabhan Predeep,
  • Bidyut Saha

摘要

Two novel metallogels, designated as Cd-AIA and Hg-AIA, were synthesized at ambient temperature utilizing 5-aminoisophthalic acid (AIA) as the gelator, along with cadmium(II) acetate and mercury(II) acetate in N,N-dimethylformamide. Rheological tests validated the mechanical robustness of the Cd(II)- and Hg(II)-based metallogels under various conditions. Characterization techniques, including EDX mapping and FESEM imaging, were employed to explore the chemical composition and microstructural details of these gels. The formation mechanisms of the metallogels were elucidated through FT-IR and Raman spectroscopy. PXRD was used to confirm the crystalline nature of the synthesized gels. TGA of Cd-AIA and Hg-AIA metallogels analyse the thermal stability of the metallogels upto 250 ºC. The optical band gaps were determined from the absorption spectra, indicating a strong semiconducting behavior. The semiconducting properties were further confirmed by electronic device characterization and charge carrier mobility assessments. Notably, the electron mobility observed in these metallogels is exceptionally high, potentially setting a new benchmark compared to previously reported values. A significant difference in conductivity was found between the two gels, with the Hg-AIA metallogel displaying superior semiconducting properties. Moreover, when tested under the same device configuration, the Hg-AIA diode exhibited better switching performance, a higher on–off ratio, and lower series resistance than the Cd-AIA diode. The I-V characteristics revealed a broad non-linear behavior, with the Cd-AIA diode showing greater non-linearity, likely due to its higher series resistance compared to the Hg-AIA diode.

Graphical Abstract